相关论文: Impurity effect on weak anti-localization in the t…
Milling of 2D flakes is a simple method to fabricate nanomaterial of any desired shape and size. Inherently milling process can introduce the impurity or disorder which might show exotic quantum transport phenomenon when studied at the low…
Weak antilocalization (WAL) effect due to the interference corrections to the conductivity has been studied experimentally in a strained InGaAs/InP quantum well structure. From measurements in tilted magnetic filed, it was shown that both…
We report transport properties for layered BiCh2-based (Ch = S, Se) superconductors LaO1-xFxBiS2-ySey (x = 0.2, 0.5, y = 0-1.05) and the observation of weak antilocalization (WAL). Electrical resistivity and Hall coefficients for the…
The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the…
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…
Thin films of the topological insulator (BiSb)$_2$Te$_3$ oriented along the [0001] direction were grown via molecular beam epitaxy on substrates of Al$_2$O$_3$ (0001) and MgF$_2$ (110) single crystals, as well as on an epitaxial thin film…
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the…
Topological insulators with their topological protected surface states are highly promising quantum materials. In this article the micro-flakes of single-crystalline topological insulators Bi2Te3 and Sb2Te3 are explored through physical…
Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties…
Weak localization and weak anti-localization are quantum interference effects in quantum transport in a disordered electron system. Weak anti-localization enhances the conductivity and weak localization suppresses the conductivity with…
The heterointerface between topological insulators and magnetic materials provides a crucial platform for investigating exotic electronic and magnetic phases, with implications for both fundamental studies and potential applications. A key…
Artificial confinement of electrons by tailoring the layer thickness has turned out to be a powerful tool to harness control over competing phases in nano-layers of complex oxides. We investigate the effect of dimensionality on transport…
Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films…
We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films…
We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only…
Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak…
Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we…
Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However,…
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…
Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of…