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We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon…

介观与纳米尺度物理 · 物理学 2010-02-24 I. Deretzis , G. Fiori , G. Iannaccone , A. La Magna

Adopting a purely two dimensional relativistic equation for graphene's carriers contradicts the Heisenberg uncertainty principle since it requires setting off-the-surface coordinate of a three-dimensional wavefunction to zero. Here we…

介观与纳米尺度物理 · 物理学 2015-05-27 Victor Atanasov , Avadh Saxena

Impurities are unavoidable during the preparation of graphene samples and play an important role in graphene's electronic properties when they are adsorbed on graphene surface. In this work, we study the electronic structures and transport…

介观与纳米尺度物理 · 物理学 2020-03-31 Lan Chen , Fangping Ouyang , Songshan Ma , Tie-Feng Fang , Ai-Min Guo , Qing-Feng Sun

Graphene, the atomically-thin honeycomb carbon lattice, is a highly conducting 2D material whose exposed electronic structure offers an ideal platform for sensing. Its biocompatible, flexible, and chemically inert nature associated to the…

This paper explores the transport properties of aluminum-carbon composite material via ab initio methods. Interfacial and electronic dynamics of the aluminum-graphene interface structure were investigated using models of amorphous graphene…

材料科学 · 物理学 2024-02-12 K. Nepal , C. Ugwumadu , A. Gautam , K. Kappagantula , D. A. Drabold

We theoretically investigate the electronic structures of moir\'{e} superlattices arising in monolayer / bilayer graphene stacked on hexagonal boron nitride (hBN) in presence and absence of magnetic field. We develop an effective continuum…

介观与纳米尺度物理 · 物理学 2014-10-10 Pilkyung Moon , Mikito Koshino

The electronic and transport properties of aluminum-graphene composite materials were investigated using ab initio plane wave density functional theory. The interfacial structure is reported for several configurations. In some cases, the…

材料科学 · 物理学 2024-02-12 K. Nepal , C. Ugwumadu , K. N. Subedi , K. Kappagantula , D. A. Drabold

Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion.…

介观与纳米尺度物理 · 物理学 2015-07-03 Søren Schou Gregersen , Jesper Goor Pedersen , Stephen R. Power , Antti-Pekka Jauho

We simulate electron transport through graphene nanoribbons of experimentally realizable size (length L up to 2 micrometer, width W approximately 40 nm) in the presence of scattering at rough edges. Our numerical approach is based on a…

介观与纳米尺度物理 · 物理学 2012-12-11 F. Libisch , S. Rotter , J. Burgdörfer

In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a…

介观与纳米尺度物理 · 物理学 2011-04-29 Jhon W. Gonzalez , Monica Pacheco , Luis Rosales , Pedro Orellana

We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete…

介观与纳米尺度物理 · 物理学 2015-05-13 Amelia Barreiro , Michele Lazzeri , Joel Moser , Francesco Mauri , Adrian Bachtold

Electronic, transport, and spin properties of grain boundaries (GBs) are investigated in electrostatically doped graphene at finite electron densities within the Hartree and Hubbard approximations. We demonstrate that depending on the…

介观与纳米尺度物理 · 物理学 2013-09-03 S. Ihnatsenka , I. V. Zozoulenko

We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the…

介观与纳米尺度物理 · 物理学 2009-05-29 S. Adam , E. H. Hwang , E. Rossi , S. Das Sarma

Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

材料科学 · 物理学 2008-05-11 S. Adam , S. Das Sarma

Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging…

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes which causes a band gap to open up around…

Isolated, atomically thin conducting membranes of graphite, called graphene, have recently been the subject of intense research with the hope that practical applications in fields ranging from electronics to energy science will emerge.…

介观与纳米尺度物理 · 物理学 2010-09-17 S. Garaj , W. Hubbard , A. Reina , J. Kong , D. Branton , J. A. Golovchenko

Prompted by recent reports on $\sqrt{3} \times \sqrt{3}$ graphene superlattices with intrinsic inter-valley interactions, we perform first-principles calculations to investigate the electronic properties of periodically nitrogen-doped…

介观与纳米尺度物理 · 物理学 2021-02-05 Fuming Xu , Zhizhou Yu , Zhirui Gong , Hao Jin

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

We report angle-resolved electron transmission measurements through freestanding graphene sheets in the energy range of 18 to 30 eV above the Fermi level. The measurements are carried out in a low-energy electron point source microscope,…

介观与纳米尺度物理 · 物理学 2016-08-19 Flavio Wicki , Jean-Nicolas Longchamp , Tatiana Latychevskaia , Conrad Escher , Hans-Werner Fink