相关论文: Optical imaging of resonant electrical carrier inj…

We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the…

We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral…

InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…

Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…

We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the non-linear threshold voltage…

We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects,…

This paper considers the self-consistent Coulomb interaction within arrays of self-assembled InAs quantum dots (QDs) which are embedded in a pn structure. Strong emphasis is being put on the statistical occupation of the electronic QD…

Scattering of carriers between spatially separated zero dimensional states has been observed in a system of self-assembled In_{0.55}Al_{0.45}As quantum dots. We believe the interdot tunneling is mediated by localized states below the…

Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode…

Sequential single-electron charging is observed in InAs Self-Assembled Quantum Dots using capacitance spectroscopy. In this system, the Coulomb energy is smaller than the inter-level energy spacings due to the quantum confinement and both…

We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…

We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current…

The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found that scanning a negatively charged tip above particular sites…

We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe…

With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here…

We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of…

We present a consistent theoretical description of few-particle effects in the optical spectra of semiconductor quantum dots, based on a direct-diagonalization approach. We show that, because of the strong Coulomb interaction among…

Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant…

We use a scanning capacitance probe to image transport in the quantum Hall system. Applying a DC bias voltage to the tip induces a ring-shaped incompressible strip (IS) in the 2D electron system (2DES) that moves with the tip. At certain…

We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode…