相关论文: Energy Gap and Spin Polarization in the 5/2 Fracti…

The fractional quantum Hall (FQH) effect at filling factor v = 5/2 has recently come under close scrutiny, as it may possess quasi-particle excitations obeying nonabelian statistics, a property sought for topologically protected quantum…

The origin of fractional quantum Hall effect (FQHE) at 4/11 and 5/13 has remained controversial. We make a compelling case that FQHE is possible here for fully spin polarized composite fermions, but with an unconventional underlying…

The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground…

We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6…

The spin-polarized even-denominator fractional quantum Hall (FQH) states in the second Landau level (LL), i.e. 5/2 and 7/2, may possess novel quasi-particle excitations obeying non-Abelian statistics. However, the spin polarization of the…

The phenomenon of fractional quantum Hall effect (FQHE) was first experimentally observed 33 years ago. FQHE involves strong Coulomb interactions and correlations among the electrons, which leads to quasiparticles with fractional elementary…

The fractional quantum Hall effect (FQHE) is extensively studied, but the explanation for Hall plateau widths and excitation energy gaps remains elusive. We study the effective theory of FQHE built upon experimental inputs of Hall current…

We present activation gap measurements of the fractional quantum Hall effect (FQHE) in the second Landau level. Signatures for 14 (5) distinct incompressible FQHE states are seen in a high (low) mobility sample with the enigmatic 5/2 even…

The Pfaffian model has been proposed for the fractional quantum Hall effect (FQHE) at nu=5/2. We examine it for the quasihole excitations by comparison with exact diagonalization results. Specifically, we consider the structure of the…

We present a different approach to the fractional quantum Hall effect (FQHE), focusing it as a consequence of the change in the symmetry of the Hamiltonian of every electron in a two-dimensional electron gas (2DEG) under the application of…

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for…

We present an approach to the fractional quantum Hall effect observed in grapheme (GFQHE), basing us on the model developed previously for the fractional quantum Hall effect in a two-dimensional electron system embedded in a quantum well…

The energy gaps appearing in the fractional quantum Hall effect (FQHE) remain an essential aspect of the investigation. Moreover, the plateau widths in the Hall resistance have been considered simply an effect of disorder as in the integral…

We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…

The fractional quantum Hall effect (FQHE) in the second orbital Landau level at filling factor 5/2 remains enigmatic and motivates our work. We consider the effect of the quasi-2D nature of the experimental FQH system on a number of FQH…

We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system (2DES) and at very low temperatures and…

The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb…

The fractional quantum Hall (FQH) effect at the filling factor $\nu=5/2$ was discovered in GaAs heterostructures more than 35 years ago. Various topological orders have been proposed as possible candidates to describe this FQH state. Some…

The fractional quantum Hall effect (FQHE) occurs at certain magnetic field strengths B*(n) in a two-dimensional electron gas of density n at strong magnetic fields perpendicular to the plane of the electron gas. At these magnetic fields…

We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…