相关论文: Universal Properties of Linear Magnetoresistance i…
We observe an unusual tunneling magnetoresistance (TMR) phenomenon in a composite of La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ with CoFe$_{2}$O$_{4}$ where the TMR versus applied magnetic field loop suggests a "negative coercive field". Tracing its…
We present the detailed analyses of magneto-conductivities in a Weyl semimetal within Born and self-consistent Born approximations. In the presence of the charged impurities, the linear magnetoresistance can happen when the charge carriers…
A detailed study of the evolution of the magnetoresistance was performed on electrodeposited Co/Cu multilayers with Cu layer thicknesses ranging from 0.5 nm to 4.5 nm. For thin Cu layers (up to 1.5 nm), anisotropic magnetoresistance (AMR)…
The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here,…
Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the…
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…
Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs…
We report magnetoresistance measurements on a two-dimensional electron gas (2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of…
Based on existing theoretical model and by considering our longitudinal nonlinear response function, we derive a nonliear equation in which the mixed state Hall resistivity can be expressed as an analytical function of magnetic field,…
A completely opposite behavior of electronic localization is revealed in a spatially non-uniform disordered material compared to the traditional spatially uniform disordered one. This fact is substantiated by considering an order-disorder…
We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…
The longitudinal interlayer magnetoresistance $R_{zz}(B_{z})$ is calculated in strongly anisotropic layered metals, when the interlayer band width $4t_{z}$ is less than the Landau level separation $\hbar \omega_{c}$. The impurity scattering…
We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$…
We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder which is known to be the dominant disorder in semiconductor…
According to Onsager's principle, electrical resistance $R$ of general conductors behaves as an even function of external magnetic field $B$. Only in special circumstances, which involve time reversal symmetry (TRS) broken by…
We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the…
We report on a colossal negative magnetoresistance (MR) in GaAs/AlGaAs quantum well which, at low temperatures, is manifested by a drop of the resistivity by more than an order of magnitude at a magnetic field $B \approx 1$ kG. In contrast…
We study the effect of random potential created by different types of impurities on the transverse magnetoresistance of Weyl semimetals. It is shown that the magnetic field and temperature dependence of magnetoresistance is strongly…
A systematic, quantitative study of the effect of interface roughness and disorder on the magnetoresistance of FeCo$|$vacuum$|$FeCo magnetic tunnel junctions is presented based upon parameter-free electronic structure calculations. Surface…
A theoretical formulation of magnetoresistance effect in a metallic ferromagnetic/nonmagnetic bilayer originated from the charge-spin conversion by the anomalous Hall effect is presented. Analytical expressions of the longitudinal and…