相关论文: STM and RHEED study of the Si(001)-c(8x8) surface

We report on low temperature scanning tunneling microscopy (STM) studies of the electronic structure of vortex cores in Bi2Sr2CaCu2O8+d (BSCCO). At the vortex core center, an enhanced density-of-states (DOS) is observed at energies near 7…

First principles calculations of the geometric and electronic structures have been performed for two coverages (0.25 ML and 0.5 ML) of C on Ni(001) to understand the mechanism of the Ni(001) reconstruction induced by carbon adsorption. The…

Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (<600 deg C)…

The effects of ion beam induced atomic mixing and subsequent thermal treatment in Si/C multilayer structures are investigated by use of the technique of grazing incidence X-ray diffraction (GIXRD) and Raman spectroscopy. The [Si (3.0 nm) /…

We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a…

The oxidized Ag(111) surface has been studied by a combination of experimental and theoretical methods, scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and density functional theory (DFT). A large variety of…

The reshaping of amorphous SiOx nanowires (a-SiOx NWs) as purely induced by uniform electron beam (e-beam) irradiation was in-situ studied at room temperature in transmission electron microscope. It was observed that the axially straight NW…

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state…

This work describes an innovative concept for the development of organized molecular systems thanks to the template effect of the pre-structured semi-conductive SmSi(111) interface. This substrate was selected because Sm deposition in the…

Thick (~50 nm) films of Hf were evaporated onto bare and oxidized Si(001) samples, and thin (~monolayer) films of Hf were evaporated onto clean Si(001)-(2x1) surfaces. Upon annealing to 1000$^/circ$C, films of HfSi2 were formed after…

Equiatomic TaNbHfZr refractory high-entropy alloys (HEAs) were synthesized by arc-melting. The HEAs were annealed at 1800{\deg}C for different times, at maximum up to 8 days. Their on average body-centered cubic (bcc), solid-solution…

Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading difficulties were observed in the case of trench-patterned…

We investigated the growth of titanium oxide two-dimensional (2D) nanostructures on Au(111), produced by Ti evaporation and post-deposition oxidation. Scanning tunneling microscopy and spectroscopy (STM and STS) and low-energy electron…

The electronic structure of the heavy fermion compound CeB6 is probed by resonant inelastic soft X-ray scattering using photon energies across the Ce 3d and 4d absorption edges. The hybridization between the localized 4f orbitals and the…

Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy…

Cadmium selenide (CdSe) is an inorganic semiconductor with unique optical and electronic properties that made it useful in various applications, including solar cells, light-emitting diodes, and biofluorescent tagging. In order to…

The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here.…

The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed, both with…

Much of the exotic functionality of prime interest in quantum materials emerges from structural and electronic ground states that can only be accessed at cryogenic temperatures. Understanding device operation therefore requires structural…

Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge…