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相关论文: Boron nitride substrates for high-quality graphene…

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One of the enduring challenges in graphene research and applications is the extreme sensitivity of its charge carriers to external perturbations, especially those introduced by the substrate. The best available substrates to date, graphite…

介观与纳米尺度物理 · 物理学 2015-04-29 Chih-Pin Lu , Guohong Li , K. Watanabe , T. Taniguchi , Eva Y. Andrei

We reported the basal-plane thermal conductivity in exfoliated bilayer hexagonal boron nitride h-BN that was measured using suspended prepatterned microstructures. The h-BN sample suitable for thermal measurements was fabricated by…

介观与纳米尺度物理 · 物理学 2016-06-28 Chengru Wang , Jie Guo , Lan Dong , Adili Aiyiti , Xiangfan Xu , Baowen Li

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently…

介观与纳米尺度物理 · 物理学 2015-06-04 Yike Hu , Ming Ruan , Zelei Guo , Rui Dong , James Palmer , John Hankinson , Claire Berger , Walt A. de Heer

The recently observed unconventional ferroelectricity in AB bilayer graphene sandwiched by hexagonal Boron Nitride (hBN) presents a new platform to manipulate correlated phases in multilayered van der Waals heterostructures. We present a…

介观与纳米尺度物理 · 物理学 2022-11-30 Ziyan Zhu , Stephen Carr , Qiong Ma , Efthimios Kaxiras

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction…

介观与纳米尺度物理 · 物理学 2014-05-21 Menno Bokdam , Taher Amlaki , Geert Brocks , Paul J. Kelly

Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost…

We propose monolayer epitaxial graphene and hexagonal boron nitride (h-BN) as ultimate thickness covalent spacers for magnetoresistive junctions. Using a first-principles approach, we investigate the structural, magnetic and spin transport…

介观与纳米尺度物理 · 物理学 2009-07-24 Oleg V. Yazyev , Alfredo Pasquarello

Using periodic DFT, we examined the adsorption of NO2, NH3, and O3 on the h-BN side of a graphene/h-BN heterostructure designed as a model gas sensor material. The h-BN overlayer serves both as an active adsorption surface and as protection…

材料科学 · 物理学 2026-03-17 Martin Siebel , Pavel Rubin , Raivo Jaaniso

The development of multifunctional solid-state materials is key to advancing lithium-ion batteries with enhanced safety and simplified architectures. Here, we report a scalable, highly efficient (near $100\%$), solvent-free mechanochemical…

Graphene-based 2D heterostructures exhibit excellent mechanical and electrical properties, which are expected to exhibit better performances than graphene for nanoelectromechanical pressure sensors. Here, we built the pressure sensor models…

介观与纳米尺度物理 · 物理学 2024-10-14 Quan Liu , Chang He , Jie Ding , Wendong Zhang , Xuge Fan

Lateral heterostructures of two-dimensional materials may exhibit various intriguing emergent properties. Yet when specified to the orientationally aligned heterojunctions of zigzag graphene and hexagonal boron nitride (hBN) nanoribbons,…

介观与纳米尺度物理 · 物理学 2015-09-22 Jiang Zeng , Wei Chen , Ping Cui , Dong-Bo Zhang , Zhenyu Zhang

Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but the investigation of their mechanical properties still greatly lacks. Here we report…

Device fabrication often requires materials that are either reliably conducting, reliably semiconducting, or reliably nonconducting. Bilayer graphene (BLG) changes from a superconductor to a semiconductor depending on it's stacking, but…

材料科学 · 物理学 2019-04-08 Chad E. Junkermeier , Ricardo Paupitz

High carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier…

We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine…

Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFET) in terms of their…

介观与纳米尺度物理 · 物理学 2019-03-28 Pedro C. Feijoo , Francisco Pasadas , José M. Iglesias , El Mokhtar Hamham , Raúl Rengel , David Jiménez

Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal…

介观与纳米尺度物理 · 物理学 2011-09-26 Aniruddha Konar , Raj Jana , Tian Fang , Guowang Li , William O'Brien , Debdeep Jena

Suspended graphene membrane presents a particular structure with fundamental interests and applications in nanomechanics, thermal transport and optoelectronics. Till now, the commonly used geometries are still quite simple and limited to…

Graphite and hexagonal boron nitride (h-BN) are two prominent members of the family of layered materials possessing a hexagonal lattice. While graphite has non-polar homo-nuclear C-C intra-layer bonds, h-BN presents highly polar B-N bonds…

材料科学 · 物理学 2012-04-16 Oded Hod

Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these…