相关论文: D- shallow donor near a semiconductor-metal and a …

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative…

We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale…

Accurate prediction of shallow-donor electron binding energies is critical for device modeling, dopant activation, and donor-based quantum technologies. Traditional beyond-DFT approaches (e.g., hybrid functionals, GW) are prohibitively…

In a recent paper Hao et al. [Phys. Rev. B 80, 035329 (2009)] reported variational calculations of energy spectrum for shallow hydrogenic donor in the structure of semiconductor/insulator/metal with a new type of trial wave function. They…

We carry out a detailed investigation of neutral ($D^0$) and charged ($D^-$) impurity states of hydrogen-like donors in spherical semiconductor quantum dots. The investigation is carried out within the effective mass theory (EMT). We take…

Understanding the electronic properties of dopants near an interface is a critical challenge for nano-scale devices. We have determined the effect of dielectric mismatch and quantum confinement on the ionization energy of individual…

Exchange interactions among defects in semiconductors are commonly treated within effective-mass theory using a scaled hydrogenic wave-function. However such a wave-function is only applicable to shallow impurities; here we present a simple…

We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and…

The electron pairing mechanism by the interfacial charge-induced adsorption mode of high-temperature superconductors is revealed. For the YBCO superconductors, the coupling of electrons and valence-flexible state of oxygen ions forms a…

The electronic structure of the three-particle donor bound exciton (D$^0$X) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approximation. The calculations yield a transition energy close to…

We discuss a scenario for interface-induced superconductivity involving pairing by dipolar excitations proximate to a two-dimensional electron system controlled by a transverse electric field. If the interface consists of transition metal…

Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex…

We study electron dynamics in a two-band delta-doped semiconductor within the envelope-function approximation. Using a simple parametrization of the confining potential arising from the ionized donors in the delta-doping layer, we are able…

The binding energy of a negatively charged hydrogenic impurity with on- and off-center position in a spherical Gaussian quantum dot was calculated with the configuration interaction method. Our calculations show that $E_b$ is always…

We present results of variational calculations of the binding energy of a neutral donor in a quantum well in the presence of a magnetic field tilted relative to the QW plane. Assuming that the donor is located in the center of the QW, we…

Quasiparticle bound states are found theoretically on transparent interfaces of d-wave superconductors (dSC) with charge density wave solids (CDW), as well as s-wave superconductors (sSC) with d-density waves (DDW). These bound states…

Superconducting proximity effect in normal metal (N) / $d_{x^2-y^2}$-wave superconductor (D) junctions in the presence of attractive interelectron potentials which can induce subdominant s-wave pair potentials both in N and D sides, is…

We study the proximity effects near the interface between a d-wave superconductor (S) and a ferromagnet (F) or an antiferromagnet (AF). The S-side (F and AF-side) is described by the attractive (repulsive) Hubbard model, and the Bogoliubov…

Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of…