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相关论文: Scanning Gate Microscopy on Graphene: Charge Inhom…

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We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier…

介观与纳米尺度物理 · 物理学 2010-12-30 Myung-Ho Bae , Zhun-Yong Ong , David Estrada , Eric Pop

We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport…

介观与纳米尺度物理 · 物理学 2012-03-09 Ajay K. Bhat , Vibhor Singh , Sunil Patil , Mandar M. Deshmukh

Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport…

介观与纳米尺度物理 · 物理学 2011-11-09 T. O. Wehling , K. S. Novoselov , S. V. Morozov , E. E. Vdovin , M. I. Katsnelson , A. K. Geim , A. I. Lichtenstein

We investigate spin transport in diffusive graphene nanoribbons with both clean and rough zigzag edges, and long-range potential fluctuations. The long-range fields along the ribbon edges cause the local doping to come close to the charge…

介观与纳米尺度物理 · 物理学 2014-03-31 Jan Bundesmann , Ming-Hao Liu , Inanc Adagideli , Klaus Richter

Graphene and carbon nanotubes have extraordinary mechanical and electronic properties. Intrinsic line defects such as local non-hexagonal reconstructions or grain boundaries, however, significantly reduce the tensile strength, but feature…

材料科学 · 物理学 2016-07-20 Daniel Berger , Christian Ratsch

Transport properties through wide and short ballistic graphene junctions are studied in the presence of arbitrary dopings and magnetic fields. No dependence on the magnetic field is observed at the Dirac point for any current cumulant, just…

介观与纳米尺度物理 · 物理学 2007-05-23 Elsa Prada , Pablo San-Jose , Bernhard Wunsch , Francisco Guinea

Graphene is known to show a significant photo-thermoelectric effect that can exceed its photovoltaic contribution. Here, by utilizing this effect, we demonstrate a photovoltage measurement of cyclotron resonance in a double-back-gated…

介观与纳米尺度物理 · 物理学 2018-09-07 Kei Kinoshita , Rai Moriya , Miho Arai , Satoru Masubuchi , Kenji Watanabe , Takashi Taniguchi , Tomoki Machida

Non-diffusive effects in charge transport become relevant as device sizes and features become comparable to the electronic mean free path. As a model system, we investigate the electric transport around mesoscopic defects in graphene with…

介观与纳米尺度物理 · 物理学 2025-10-03 Toni Markovic , Wei Huang , William S. Huxter , Pietro Gambardella , Sebastian Stepanow

We investigate the conductivity of doped graphene in the semiclassical Boltzmann limit, as well as the conductivity minimum within the self-consistent transport theory. Using the hard-disk model for a two-dimensional distribution of…

材料科学 · 物理学 2013-11-21 Rastko Aničić , Zoran L. Mišković

Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron…

介观与纳米尺度物理 · 物理学 2015-05-18 Jesse Berezovsky , Robert M Westervelt

We have performed a density functional study of graphene adsorbed on Au(111) surface using both a local density approximation and a semiempirical van der Waals approach proposed by Grimme, known as the DFT-D2 method. Graphene physisorbed on…

材料科学 · 物理学 2015-05-27 J. Slawinska , P. Dabrowski , I. Zasada

We examine the robustness of the S-shaped current-voltage characteristics associated with hot-carrier-induced electrical breakdown in perforated graphene metasurfaces (PGMs) as a function of doping. The perforation of the graphene layer…

介观与纳米尺度物理 · 物理学 2025-11-17 M. Ryzhii , V. Ryzhii , C. Tang , T. Otsuji , M. S. Shur

Dopants positioned near edges in nanostructured graphene behave differently from bulk dopants. Most notable, the amount of charge transferred to delocalized states (i.e. doping efficiency) depends on position as well as edge chirality. We…

介观与纳米尺度物理 · 物理学 2015-06-24 Thomas Garm Pedersen

Graphene provides a fascinating testbed for new physics and exciting opportunities for future applications based on quantum phenomena. To understand the coherent flow of electrons through a graphene device, we employ a nanoscale probe that…

介观与纳米尺度物理 · 物理学 2010-01-29 J. Berezovsky , M. F. Borunda , E. J. Heller , R. M. Westervelt

In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…

介观与纳米尺度物理 · 物理学 2012-06-07 D. L. Mafra , P. Gava , L. M. Malard , R. S. Borges , G. G. Silva , J. A. Leon , F. Plentz , F. Mauri , M. A. Pimenta

Tuning the chemical potential of a solid to the vicinity of a van Hove singularity (vHS) is a well-established route to discovering emergent quantum phases. In monolayer graphene, the use of electron-donating metal layers has recently…

Chromium atoms in graphene have been proposed to exhibit magnetic moments and spin-selective conducting states depending on the local bonding geometry within the graphene structure, which could lead to interesting applications in…

材料科学 · 物理学 2023-07-13 Ondrej Dyck , Mina Yoon , Lizhi Zhang , Andrew R. Lupini , Jacob L. Swett , Stephen Jesse

Avoiding charge density variations and impurities in graphene is vital for high-quality graphene-based devices. Here, we demonstrate an optical method using Raman 2D peak-split to monitor charge density variations in the range 1-25e10 cm-2.…

应用物理 · 物理学 2020-05-12 Zhuofa Chen , Nathan Ullberg , Mounika Vutukuru , David Barton , Anna K Swan

Spin-dependent properties of single-layer graphene (SLG) have been studied by non-local spin valve measurements at room temperature. Gate voltage dependence shows that the non-local magnetoresistance (MR) is proportional to the conductivity…

介观与纳米尺度物理 · 物理学 2010-01-20 Wei Han , W. H. Wang , K. Pi , K. M. McCreary , W. Bao , Yan Li , F. Miao , C. N. Lau , R. K. Kawakami

Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive…

材料科学 · 物理学 2009-01-05 Z. Klusek , P. Dabrowski , P. Kowalczyk , W. Kozlowski , P. Blake , M. Szybowicz , T. Runka , W. Olejniczak