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Dispersion-based graphene materials are promising candidates for various sensing applications. They offer the advantage of relatively simple and fast deposition via spin-coating, Langmuir-Blodgett deposition, or inkjet printing. Film…

Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

材料科学 · 物理学 2008-05-11 S. Adam , S. Das Sarma

Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…

材料科学 · 物理学 2019-06-14 B. C. Worley , S. Kim , T. J. Ha , S. Park , R. Haws , P. Rossky , D. Akinwande , A. Dodabalapur

We report angle-resolved electron transmission measurements through freestanding graphene sheets in the energy range of 18 to 30 eV above the Fermi level. The measurements are carried out in a low-energy electron point source microscope,…

介观与纳米尺度物理 · 物理学 2016-08-19 Flavio Wicki , Jean-Nicolas Longchamp , Tatiana Latychevskaia , Conrad Escher , Hans-Werner Fink

Medical electrophysiological sensors that can study the body and diagnose diseases depend on consistently low impedance electrode-skin interfaces. Clinical-standard wet electrodes use hydrogels and skin abrasion to improve the interface and…

The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO2/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes than can be free-standing or…

材料科学 · 物理学 2009-12-11 Hisato Yamaguchi , Goki Eda , Cecilia Mattevi , HoKwon Kim , Manish Chhowalla

We report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes. High device mobility is realized using boron nitride encapsulation…

介观与纳米尺度物理 · 物理学 2019-04-10 Y. Zeng , J. I. A. Li , S. A. Dietrich , O. M. Ghosh , K. Watanabe , T. Taniguchi , J. Hone , C. R. Dean

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…

介观与纳米尺度物理 · 物理学 2015-09-23 K. Bennaceur , B. A. Schmidt , S. Gaucher , D. Laroche , M. P. Lilly , J. L. Reno , K. W. West , L. N. Pfeiffer , G. Gervais

The unusual electronic properties of graphene, which are a direct consequence of its two-dimensional (2D) honeycomb lattice, have attracted a great deal of attention in recent years. Creation of artificial lattices that recreate graphene's…

We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The…

Lithium phosphorus oxynitride (LiPON) is a well-known amorphous thin film solid electrolyte that has been extensively studied in the last three decades. Despite the promises to pair with Li metal anode and various cathode materials, the…

Graphene is an ideal 2D material system bridging electronic and photonic devices. It also breaks the fundamental speed and size limits by electronics and photonics, respectively. Graphene offers multiple functions of signal transmission,…

应用物理 · 物理学 2018-10-19 Rong Wang , Xingang Ren , Ze Yan , Lijun Jiang , Wei E. I. Sha , Guangcun Shan

Nanostructured materials have emerged as an alternative to enhance the figure of merit (ZT) of thermoelectric (TE) devices. Graphene exhibits a high electrical conductivity (in-plane) that is necessary for a high ZT; however, this effect is…

Graphene is at the center of a significant research effort. Near-ballistic transport at room temperature and high mobility make it a potential material for nanoelectronics. Its electronic and mechanical properties are also ideal for micro…

材料科学 · 物理学 2010-03-03 Z. Sun , T. Hasan , F. Torrisi , D. Popa , G. Privitera , F. Wang , F. Bonaccorso , D. M. Basko , A. C. Ferrari

Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The…

Devices made from two dimensional materials such as graphene and transition metal dichalcogenides exhibit remarkable electronic properties of interest to many subdisciplines of nanoscience. Owing to their 2D nature, their quality is highly…

介观与纳米尺度物理 · 物理学 2019-11-12 Michael A. Altvater , Shuang Wu , Zhenyuan Zhang , Tianhui Zhu , Guohong Li , Kenji Watanabe , Takashi Taniguchi , Eva Y. Andrei

Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an…

介观与纳米尺度物理 · 物理学 2019-03-27 I. G. Serrano , J. Panda , Fernand Denoel , Örjan Vallin , Dibya Phuyal , Olof Karis , M. Venkata Kamalakar

We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected…

介观与纳米尺度物理 · 物理学 2014-01-17 Dong-Keun Ki , Alberto F. Morpurgo

In this study, we demonstrate an improved version of the roll-to-roll mechanical exfoliation method, incorporating a controlled sliding motion into the exfoliation process to achieve uniform nanosheet films of two-dimensional materials at…

We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphene transistors…

介观与纳米尺度物理 · 物理学 2013-03-04 Pia Juliane Wessely , Frank Wessely , Emrah Birinci , Bernadette Riedinger , Udo Schwalke