中文
相关论文

相关论文: Dynamical Unbinding Transition in a Periodically D…

200 篇论文

Metal-insulator transitions are studied within a three-component Falicov-Kimball model which mimics a mixture of one-component and two-component fermionic particles with local repulsive interactions in optical lattices. Within the model the…

强关联电子 · 物理学 2013-08-29 Duong-Bo Nguyen , Minh-Tien Tran

We consider Mott insulators driven by periodic coherent laser radiation, using both single orbital and multi-orbital models, noting that the latter is of more interest in solid state systems. We derive general expressions for the resulting…

强关联电子 · 物理学 2019-05-15 Kasra Hejazi , Jianpeng Liu , Leon Balents

Mott transition plays a key role in strongly correlated physics but its nature is not yet fully understood. Motivated by recent development of Schwinger boson approach for the Kondo lattice, we propose in this work a novel slave fermion…

强关联电子 · 物理学 2022-11-18 Zhuoqing Long , Jiangfan Wang , Yi-feng Yang

We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes $t_1$ and $t_2$ for the two orbitals on the two-dimensional square lattice by using {\it non-magnetic} variational wave functions,…

强关联电子 · 物理学 2016-02-18 Luca F. Tocchio , Federico Arrigoni , Sandro Sorella , Federico Becca

Heavy fermion materials naturally combine strong spin-orbit interactions and electronic correlations. When there is precisely one conduction electron per impurity spin, the coherent heavy fermion state is insulating. This Kondo insulating…

强关联电子 · 物理学 2013-07-12 Jan Werner , Fakher F. Assaad

The interplay between charge and spin degrees of freedom in strongly correlated fermionic systems, in particular of Dirac fermions, is a long-standing problem in condensed matter physics. We investigate the competing orders in the…

量子气体 · 物理学 2016-07-06 Zhichao Zhou , Da Wang , Zi Yang Meng , Yu Wang , Congjun Wu

We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

It is generally accepted that doped Mott insulators can be well characterized by the t-J model. In the t-J model, the electron fractionalization is dictated by the phase string effect. We found that in the underdoped regime, the…

强关联电子 · 物理学 2012-01-18 Peng Ye , Chu-Shun Tian , Xiao-Liang Qi , Zheng-Yu Weng

In order to have a better understanding of ultrafast electrical control of exchange interactions in multi-orbital systems, we study a two-orbital Hubbard model at half filling under the action of a time-periodic electric field. Using…

强关联电子 · 物理学 2019-03-06 M. M. S. Barbeau , M. Eckstein , M. I. Katsnelson , J. H. Mentink

We describe the behavior of a system of fermionic atoms loaded in a bipartite one-dimensional optical lattice that is under the action of an external time-periodic driving force. By using Floquet theory, an effective model with renormalized…

量子气体 · 物理学 2014-09-05 M. Di Liberto , D. Malpetti , G. I. Japaridze , C. Morais Smith

We study the doping of a Mott insulator in the presence of quenched frustrating disorder in the magnetic exchange. A low doping regime $\delta<J/t$ is found, in which the quasiparticle coherent scale is low : $\epsilon_F^* = J…

强关联电子 · 物理学 2016-08-31 Olivier Parcollet , Antoine Georges

We study transitions between topological phases featuring emergent fractionalized excitations in two-dimensional models for Mott insulators with spin and orbital degrees of freedom. The models realize fermionic quantum critical points in…

We reformulate the time-dependent Gutzwiller approximation by M. Schir\'o and M. Fabrizio [Phys. Rev. Lett. 105, 076401 (2010)] in the framework of slave-boson mean-field theory, which is used to investigate the dynamical Mott transition of…

强关联电子 · 物理学 2013-07-17 Malte Behrmann , Michele Fabrizio , Frank Lechermann

We introduce two dimensional fermionic band models with two orbitals per lattice site, or one spinful orbital, and which have a non-zero topological Chern number that can be changed by varying the ratio of hopping parameters. A…

强关联电子 · 物理学 2013-02-14 Miguel A. N. Araújo , Eduardo V. Castro , Pedro D. Sacramento

We use the determinant Quantum Monte Carlo method (DQMC) to study the interaction-driven semimetal to antiferromagnetic insulator transition in a $\pi$-flux Hamiltonian with modulated hoppings, a model which has two species of Dirac…

强关联电子 · 物理学 2018-07-04 H. -M. Guo , Lei Wang , R. T. Scalettar

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

Periodically driven quantum many-body systems host unconventional behavior not realized at equilibrium. Here we investigate such a setup for strongly interacting spinless fermions on a chain, which at zero temperature and strong…

强关联电子 · 物理学 2024-05-15 Alexander Osterkorn , Constantin Meyer , Salvatore R. Manmana

We study transient dynamics of hole carriers injected at a certain time into a Mott insulator with antiferromagnetic long range order. This is termed ``dynamical hole doping" as contrast with chemical hole doping. Theoretical framework for…

强关联电子 · 物理学 2015-06-18 Eiki Iyoda , Sumio Ishihara