相关论文: Electrically-induced n-i-p junctions in multiple g…

A systematic treatment of graphene-semiconductor junction is presented. Finite density of states at the Fermi level of graphene leads to exotic electronic properties at graphene-semiconductor interface. Quite generally, the Schottky-Mott…

A remarkable property of intrinsic graphene is that upon doping, electrons and holes travel through the monolayer thick material with constant velocity which does not depend on energy up to about $0.3$ eV (Dirac fermions), as though the…

Optical responses of graphene in the presence of intense circularly and linearly polarized terahertz fields are investigated based on the Floquet theory. We examine the energy spectrum and density of states. It is found that gaps open in…

Electronic decoupling of graphene from metallic and semiconducting substrates via intercalation of different species is one of the widely used approaches in studies of graphene. In the present work the modification of the electronic and…

Exact stationary solutions of the electron-photon Dirac equation are obtained to describe the strong interaction between massless Dirac fermions in graphene and circularly polarized photons. It follows from them that this interaction forms…

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron…

We perform electrical transport measurements in graphene with several sample geometries. In particular, we design ``invasive'' probes crossing the whole graphene sheet as well as ``external'' probes connected through graphene side arms. The…

We present the results of a diagrammatic, fully ab initio calculation of the $G$ peak intensity of graphene. The flexibility and generality of our approach enables us to go beyond the previous analytical calculations in the low-energy…

We theoretically reveal a new mechanism of light amplification in graphene under the conditions of interband population inversion. It is enabled by the indirect interband transitions, with the photon emission preceded or followed by the…

We show that the electromagnetic forces generated by the excitations of a mode in graphene-based optomechanical systems are highly tunable by varying the graphene chemical potential, and orders of magnitude stronger than usual…

We derive electronic structure models for weakly interacting bilayers such as graphene-graphene and graphene-hexagonal boron nitride, based on density functional theory calculations followed by Wannier transformation of electronic states.…

The 1+1 layer folded graphene sheets that deviate from AB stacking are successfully fabricated and their electronic structures are investigated by Raman spectroscopy. Significant blue shift of the 2D band of folded graphene compared to that…

Two graphene-based T-shaped multifunctional components for THz and Far-Infrared regions are proposed and analyzed. The first component can serve as a divider, a switch and a dynamically controllable filter. This T-junction presents a…

The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a…

We investigated a suspended bilayer graphene where the bottom (top) layer is doped by boron (nitrogen) substitutional atoms by using Density Functional Theory (DFT) calculations. We found that at high dopant concentration (one B-N pair…

This paper is devoted to development of perturbation theory for studying the properties of graphene sheet of finite size, at nonzero temperature and chemical potential. The perturbation theory is based on the tight-binding Hamiltonian and…

Graphene nano-ribbons junctions based electronic devices are proposed in this Letter. Non-equilibrium Green function calculations show that nano-ribbon junctions tailored from single layer graphene with different edge shape and width can…

The electron-electron interactions effects on the shape of the Fermi surface of doped graphene are investigated. The actual discrete nature of the lattice is fully taken into account. A $\pi$-band tight-binding model, with nearest-neighbor…

Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…