相关论文: A novel and precise time domain description of MOS…

The frequency-dependent spectrum of current fluctuations through nano-scale channels is studied using analytical and computational techniques. Using a stochastic Nernst-Planck description and neglecting the interactions between the ions…

With the growing efforts in isolating solid-state qubits from external decoherence sources, the material-inherent sources of noise start to play crucial role. One representative example is electron traps in the device material or substrate.…

Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise…

Complex systems, such as the power grid, are essential for our daily lives. Many complex systems display (multi-)fractal behavior, correlated fluctuations and power laws. Whether the power-grid frequency, an indicator about the balance on…

High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide…

The environment of a quantum dot, which is connected to two leads, is modeled by telegraph noise, i.e. random Markovian jumps of the (spinless) electron energy on the dot between two levels. The temporal evolutions of the charge on the dot…

A time-frequency diagram is a commonly used visualization for observing the time-frequency distribution of radio signals and analyzing their time-varying patterns of communication states in radio monitoring and management. While it excels…

We analyze the effects of roughness in the magnitude of the magnetic field produced by a current carrying microwire, which is caused by geometric fluctuation of the edge of wire. The relation between the fluctuation of the trapping…

The linear part of transient evoked (TE) otoacoustic emission (OAE) is thought to be generated via coherent reflection near the characteristic place of constituent wave components. Because of the tonotopic organization of the cochlea, high…

We adopt a stochastic approach to study the charge transport in transistors. In this approach, the hole and electron densities are ruled by diffusion-reaction stochastic partial differential equations satisfying local detailed balance…

The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…

We study mesoscopic fluctuations and weak localization correction to the supercurrent in Josephson junctions with coherent diffusive electron dynamics in the normal part. Two kinds of junctions are considered: a chaotic dot coupled to…

We review two recently developed efficient methods for calculating rate constants of processes dominated by rare events in high-dimensional complex systems. The first is transition interface sampling (TIS), based on the measurement of…

Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete…

We calculate the low-frequency current noise for AC biased mesoscopic chaotic cavities and diffusive wires. Contrary to what happens for the admittance, the frequency dispersion is not dominated by the electric response time (the "RC" time…

Time-vertex graph signal (TVGS) models describe time-varying data with irregular structures. The bandlimitedness in the joint time-vertex Fourier spectral domain reflects smoothness in both temporal and graph topology. In this paper, we…

Motional heating of ions in micro-fabricated traps is a challenge hindering experimental realization of large-scale quantum processing devices. Recently a series of measurements of the heating rates in surface-electrode ion traps…

A time-dependent bias voltage on a tunnel junction generates a time-dependent modulation of its current fluctuations, and in particular of its variance. This translates into an excitation at frequency $\tilde{f}$ generating correlations…

This industry-oriented paper originates from the observation that current frequency quality metrics utilized by transmission system operators (TSOs) fail to fully capture the dynamic behavior of the grid frequency. Motivated by this gap,…

A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…