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A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…

应用物理 · 物理学 2022-11-23 A. D. Smith , S. Vaziri , S. Rodriguez , M. Östling , M. C. Lemme

High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these…

Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate to another desired substrate. This key step for device…

Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene…

The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the…

介观与纳米尺度物理 · 物理学 2015-06-18 Raymond Sachs , Zhisheng Lin , Patrick Odenthal , Roland Kawakami , Jing Shi

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly…

We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred…

Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree,…

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

介观与纳米尺度物理 · 物理学 2016-02-19 N. C. S. Vieira , J. Borme , G. Machado , F. Cerqueira , P. P. Freitas , V. Zucolotto , N. M. R. Peres , P. Alpuim

Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a…

Flexible strain gauges with 88% optical transmittance, of reduced graphene oxide (rGO) on poly dimethylsiloxne membranes, are produced form monolayers of graphene oxide assembled into densely packed sheets at an immiscible hexane/water…

应用物理 · 物理学 2023-06-12 Joseph Neilson , Pietro Cataldi , Brian Derby

We report that 30-inch scale multiple roll-to-roll transfer and wet chemical doping considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene…

For commercial grade electronic devices, stable structures are required to ensure a long device life span. When such devices contain nanomaterials like graphene, it is crucial that these materials resist industrial processes and harsh…

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…

The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by…

Due to its extraordinary properties, suspended graphene is a critical element in a wide range of applications. Preparation methods that preserve the unique properties of graphene are therefore in high demand. To date, all protocols for the…

应用物理 · 物理学 2023-11-15 L. Kalkhoff , S. Matschy , A. S. Meyer , L. Lasnig , N. Junker , M. Mittendorff , L. Breuer , M. Schleberger

We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to…

介观与纳米尺度物理 · 物理学 2016-01-07 T. S. Abhilash , Roberto De Alba , Nikolay Zhelev , Harold G Craighead , Jeevak M Parpia

The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene…

介观与纳米尺度物理 · 物理学 2013-02-07 Nicholas Petrone , Inanc Meric , James Hone , Kenneth L. Shepard

Low-dimensional materials hold great promises for exploring emergent physical phenomena, nanoelectronics, and quantum technologies. Their synthesis often depends on catalytic metal films, from which the synthesized materials must be…

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…

介观与纳米尺度物理 · 物理学 2015-05-18 Gianluca Fiori , S. Lebègue , A. Betti , P. Michetti , M. Klintenberg , O. Eriksson , Giuseppe Iannaccone
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