相关论文: Thermal Expansion of Germanium Isotopes at Low Tem…

The dynamics of the luminescence decay from germanium nanocrystals embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. At room temperature the characteristic decay time is of the order…

We measured the absolute lengths of three single crystal silicon samples by means of an imaging Twyman-Green interferometer in the temperature range from 7 K to 293 K with uncertainties of about 1 nm. From these measurements we extract the…

We report measurements of the zero-field resistivity in dilute 2D electron system in silicon at temperatures down to 35 mK. This extends the previously explored range of temperatures by almost an order of magnitude. On the metallic side,…

Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important…

We provide a complete quantitative explanation for the anisotropic thermal expansion of hcp Ti at low temperature. The observed negative thermal expansion along the c-axis is reproduced theoretically by means of a parameter free theory…

Lattice constant of Bi$_2$Se$_3$ and Sb$_2$Te$_3$ crystals is determined by X-ray powder diffraction measurement in a wide temperature range. Linear thermal expansion coefficients ($\alpha$) of the crystals are extracted, and considerable…

Using a realistic model, the mode Gruneisen parameters and the temperature dependent coefficient of linear thermal expansion are calculated for amorphous silicon. The resulting values of the Gruneisen parameters differ from the crystalline…

In this letter, we report the measurement of the coefficient of thermal expansion (CTE) of single-crystal silicon from 655 mK to 16 K using an ultra-stable laser based on a single-crystal silicon Fabry-Perot cavity. Below 1 K temperatures,…

We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…

Low-temperature specific heat was measured on the BaFe1.9Ni0.1As2 single crystals with critical transi-tion temperature Tc = 20.1 K. A clear specific heat jump with the value \DeltaC/T|Tc \approx 23 mJ/mol K^2 has been observed. In…

Laser melting of semiconductors has been observed for almost 40 years; surprisingly, it is not well understood where most theoretical simulations show a laser-induced thermal process. $\textit{Ab initio}$ nonadiabatic simulations based on…

We report an experimental study on the temperature and number evolution of cold cesium atoms diffusively cooled inside a wall-coated glass cell by measuring the absorption profile of the 62S1/2 (F=4)-62P3/2 (F'=5) transition line with a…

Laser cooling of matter through anti-Stokes photoluminescence, where the emitted frequency of light exceeds that of the impinging laser by virtue of absorption of thermal vibrational energy, has been successfully realized in condensed…

In a previous paper (cond-mat/0106554) we showed the existence of two new zero-temperature exponents (\lambda and \theta') in two dimensional Gaussian spin glasses. Here we introduce a novel low-temperature expansion for spin glasses…

We show that oblique propagation of electrons in crystals of Ge and Si, where the electron velocity does not follow the electric field even on average, can be explained using standard anisotropic theory for indirect gap semiconductors.…

The thermal and lattice dynamical properties of seven silicon clathrate framework structures are investigated with ab initio density functional methods (frameworks I, II, IV, V, VII, VIII, and H). The negative thermal expansion (NTE)…

The thermal expansion effect of silicon nanowires (SiNW) in [100], [110] and [111] directions with different sizes is theoretically investigated. At low temperatures, all SiNW studied exhibit thermal contraction effect due to the lowest…

The temperature dependence of optical constants of titanium nitride thin film is investigated using spectroscopic ellipsometry between 1.4 to 5 eV in the temperature range 300 K to 650 K in steps of 50 K. The real and imaginary parts of the…

The temperature dependence of most solid-state properties is dominated by lattice vibrations, but metals display notable purely electronic effects at low temperature, such as the linear specific heat and the linear entropy, that were…

Linear thermal expansion coefficient (LTEC) of single crystal k-(D4-BEDT-TTF)2Cu[N(CN)2]Br was studied across the crystal layers in the temperature range 2-290 K using the method of precise capacitive dilatometry. Below Tc = 11,6 K the LTEC…