相关论文: Stimulated emission in erbium doped silicon rich n…
The enhancement of Er$^{3+}$-based up-conversion for photovoltaics in multilayer porous silicon photonic structures is considered theoretically and experimentally. Transfer matrix simulations are used to assess the increased photonic…
Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium…
The combination of established nanofabrication with attractive material properties makes silicon a promising material for quantum technologies, where implanted dopants serve as qubits with high density and excellent coherence even at…
Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are fabricated on an erbium doped silicon nitride layer. This material system enables simple fabrication of the structure, since the active nitride layer can…
An erbium doped micro-laser is demonstrated utilizing $\mathrm{SiO_{2}}$ microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to…
A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…
We present a comparative study of the gain achievement in a waveguide whose active layer is constituted by a silica matrix containing silicon nanograins acting as sensitizer of either neodymium ions (Nd3+) or erbium ions (Er3+). By means of…
This study presents a 3.6-cm-long erbium-doped lithium niobate waveguide amplifier enhanced by an inverse-designed on-chip reflector. Integrating the reflector at the waveguide end yielded an internal net gain of 40.5 dB, achieving a 17.3…
One-dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 um is studied at cryogenic and room temperatures at different optical pump…
Integrated optical amplifiers and light sources are of great significance for photonic integrated circuits (PICs) and have attracted many research interests. Doping rare-earth ions in materials as a solution to realize efficient optical…
For erbium-doped amorphous oxides, such as those that are used in compact lightwave devices interfaced with silicon, values of the refractive indices are commonly obtained empirically. This work, combining experimental and theoretical…
On-chip erbium-doped optical amplifiers and lasers are essential for realizing fully integrated active silicon photonic circuits, but their performance has been limited by the low gain of amorphous host materials and the difficulty of…
Erbium-doped waveguide amplifiers have captured great attentions in recent years due to the rapid advance of photonic integration materials and fabrication techniques. In this work, a compact erbium-doped thin-film lithium niobate waveguide…
An efficient method to fabricate transparent glass ceramic fibers containing in-situ grown Er3+-doped oxide nanoparticles is presented. Characterization of the drawn fibers exhibits low loss (0.4 dB/m) and broadened Er3+ emission spectrum.…
Ultrasound detection via silicon waveguides relies on the ability of acoustic waves to modulate the effective refractive index of the guided modes. However, the low photo-elastic response of silicon and silica limits the sensitivity of…
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…
Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach…
Photonic integrated circuits based on erbium doped thin film lithium niobate on insulator has attracted broad interests with insofar various waveguide amplifiers and microlasers demonstrated. Wideband operation facilitated by the broadband…
The integration of 2D nanomaterials with silicon is expected to enrich the applications of 2D functional nanomaterials and to pave the way for next-generation, nanoscale optoelectronics with enhanced performances. Herein, a strategy for…