相关论文: Reducing quantum-regime dielectric loss of silicon…
This work presents a suite of measurement techniques for characterizing the dielectric loss tangent across a wide frequency range from $\sim$1 GHz to 150 GHz using the same test chip. In the first method, we fit data from a microwave…
Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer…
Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor…
The dielectric loss of silicon nitride (Si$_3$N$_4$) limits the performance of microwave-frequency devices that rely on this material for sensing, signal processing, and quantum communication. Using superconducting resonant circuits, we…
Two-level systems (TLS) are an important, if not dominant, source of loss and noise for superconducting resonators such as those used in kinetic inductance detectors and some quantum information science platforms. They are similarly…
Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum…
Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic layer deposited (ALD) oxide films--crystalline BeO…
Dielectrics with low loss at microwave frequencies are imperative for high-coherence solid-state quantum computing platforms. We study the dielectric loss of hexagonal boron nitride (hBN) thin films in the microwave regime by measuring the…
Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated…
Amorphous hydrogenated silicon nitride ($\textit{a}$-SiN$_\mathrm{\textit{x}}$:H) thin films irradiated with 100 MeV Ni$^{7+}$ results in the formation of continuous ion track structures at the lower fluence of $5\times{10^{12}}$…
We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium…
We report here on measurements of the reflectivity and loss tangent measured in the W-band (80-125 GHz) and D-band (125-180 GHz) in two samples of float zone silicon with intrinsic stoichiometry - one irradiated by neutrons, which increases…
Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators,…
In this letter, we present the direct loss tangent measurement of a high-resistivity intrinsic (100) silicon wafer in the temperature range from ~ 70 mK to 1 K, approaching the quantum regime. The measurement was performed using a technique…
$\alpha$-Tantalum ($\alpha$-Ta) is an emerging material for superconducting qubit fabrication due to the low microwave loss of its stable native oxide. However, hydrogen absorption during fabrication, particularly when removing the native…
The coherence times of state-of-the-art superconducting qubits are limited by bulk dielectric loss, yet the microscopic mechanism leading to this loss is unclear. Here we propose that the experimentally observed loss can be attributed to…
We perform an experimental and numerical study of dielectric loss in superconducting microwave resonators at low temperature. Dielectric loss, due to two-level systems, is a limiting factor in several applications, e.g. superconducting…
Single photon level quality factors of 500x10^3 are shown in NbTiN superconducting resonators at millikelvin temperatures. This result originates from the intrinsic low dielectric loss of NbTiN, as demonstrated by comparison with Ta, and by…
Amorphous hydrogenated silicon (a-Si:H) is an important material for surface defect passivation of photovoltaic silicon (Si) wafers in order to reduce their recombination losses. The material is however unstable with regards to hydrogen (H)…
Thermal silica is a common dielectric used in all silicon-photonic circuits. And bound hydroxyl ions (Si-OH) can provide a significant component of optical loss in this material on account of the wet nature of the thermal oxidation process.…