相关论文: Effect of interdiffusion and quantum confinement o…
The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy.…
Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and…
We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an excitation wavelength close to E1 gap, all modes are clearly…
We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers with different wavelengths. Structural properties of the…
We treat resonant Raman scattering via the multiphonon exciton transitions in cylindrical quantum dots with a parabolic confinement in the lateral direction and with a finite rectangular interface-barrier confinement in the axial direction.…
Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
Raman intensities of Si quantum dots (QDs) with up to 11,489 atoms (about 7.6 nm in diameter) for different scattering configurations are calculated. First, phonon modes in these QDs, including all vibration frequencies and vibration…
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…
We report interesting anomalies in the temperature dependent Raman spectra of FeSe$_{0.82}$ measured from 3K to 300K in the spectral range from 60 to 1800 cm$^{-1}$ and determine their origin using complementary first-principles density…
Resonance Raman scattering, which probes electrons, phonons and their interplay in crystals, is extensively used in two-dimensional materials. Here we investigate Raman modes in MoSe$_2$ at different laser excitation energies from 2.33 eV…
We report a comprehensive Raman study of the phonon behaviour in PdSe$_2$ in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon…
We have performed polarized Raman scattering measurements on the newly discovered superconductor Ta$_{4}$Pd$_{3}$Te$_{16}$ ($T_c = 4.6$ K). We observe twenty-eight out of thirty-three Raman active modes, with frequencies in good accordance…
The polarized Raman scattering spectra of nonsuperconducting $\alpha$-FeTe and of the newly discovered, As-free superconductor Fe$_{1.03}$Se$_{0.3}$Te$_{0.7}$ are measured at room temperature on single crystals. The phonon modes are…
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for…
Using finite temperature Raman spectroscopy, we investigate the electron-phonon interactions (EPI) and phonon-phonon scattering dynamics in the Dirac semimetal Cd3As2 in different fre quency regimes. Strong softening of the Raman shifts…
The weakly screened electron-hole interactions in an atomically thin semiconductor not only downshift its excitation spectrum from a quasiparticle one, but also redistribute excitation energies and wavefunction characters with profound…
We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black…
We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…
The measurement of the hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here, we report the first…