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The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and…

Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity…

介观与纳米尺度物理 · 物理学 2017-09-19 K. Gołasa , M. Grzeszczyk , M. R. Molas , M. Zinkiewicz , Ł. Bala , K. Nogajewski , M. Potemski , A. Wysmołek , A. Babiński

In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…

介观与纳米尺度物理 · 物理学 2012-06-07 D. L. Mafra , P. Gava , L. M. Malard , R. S. Borges , G. G. Silva , J. A. Leon , F. Plentz , F. Mauri , M. A. Pimenta

We present polarization resolved Raman scattering study of surface vibration modes in the topological insulator Bi$_2$Se$_3$ single crystal and thick films. Besides the four Raman active bulk phonons, we observed four additional modes with…

Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave-vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene…

介观与纳米尺度物理 · 物理学 2012-08-02 P. T. Araujo , D. L. Mafra , K. Sato , R. Saito , J. Kong , M. S. Dresselhaus

Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of…

Scattering rate calculations in two-dimensional Si/SiGe systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces, however, may exhibit diffuse Ge profiles either by design or as a…

介观与纳米尺度物理 · 物理学 2009-08-06 A. Valavanis , Z. Ikonić , R. W. Kelsall

The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $\gamma$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant…

The tetradymite compound BiSbTeSe$_2$, is one of the most bulk-insulating three-dimensional topological insulators, which makes it important in the topological insulator research. It is a member of the solid-solution system…

A theoretical model of resonant hyper-Raman scattering by an ensemble of spherical semiconductor quantum dots has been developed. The electronic intermediate states are described as Wannier-Mott excitons in the framework of the envelope…

介观与纳米尺度物理 · 物理学 2009-10-31 E. Menendez-Proupin , C. Trallero-Giner , A. Garcia-Cristobal

We have performed Raman-scattering measurements on a high-quality single crystal of the recently discovered Fe-based superconductor K$_{0.8}$Fe$_{1.6}$Se$_2$ ($T_c$ = 32 K). At least thirteen phonon modes were observed in the wave number…

超导电性 · 物理学 2015-05-27 A. M. Zhang , K. Liu , J. H. Xiao , J. B. He , D. M. Wang , G. F. Chen , B. Normand , Q. M. Zhang

We argue that Raman scattering in $B_{1g}$ symmetry allows one to distinguish between phonon-mediated and magnetically-mediated $d-$wave superconductivity. In spin mediated superconductors, $B_{1g}$ Raman intensity develops a resonance at a…

超导电性 · 物理学 2009-11-11 A. V. Chubukov , T. P. Devereaux , M. V. Klein

The recently discovered layered BiS2-based superconductors have attracted a great deal of interest due to their structural similarity to cuprate and iron-pnictide superconductors. We have performed Raman scattering measurements on two…

Using resonant Raman scattering spectroscopy with 25 different laser lines, we describe the Raman scattering spectra of mono- and multi-layers 2H-molybdenum diselenide (MoSe$_2$) as well as the different resonances affecting the most…

介观与纳米尺度物理 · 物理学 2016-04-19 P. Soubelet , A. E. Bruchhausen , A. Fainstein , K. Nogajewski , C. Faugeras

The Raman spectrum and particularly the Raman scattering intensities of monoclinic $\beta\text{-Ga}_2\text{O}_3$ are investigated by experiment and theory. The low symmetry of $\beta\text{-Ga}_2\text{O}_3$ results in a complex dependence of…

材料科学 · 物理学 2017-02-07 Christian Kranert , Chris Sturm , Rüdiger Schmidt-Grund , Marius Grundmann

Raman scattering [K. M. F. Shahil et al., Appl. Phys. Lett. 96, 153103 (2010), V. Gnezdilov et al., Phys. Rev. B 84, 195118 (2011) and H. H. Kung et al., Phys. Rev. B 95, 245406 (2017)], inelastic helium scattering [X. Zhu et al., Phys.…

Polarized Raman scattering has been performed on CaC6 superconductor. We identify two of the three Raman active Eg phonon modes at 440 and 1508 cm-1 expected for the R-3m space group of CaC6. These first order scattering modes appear along…

材料科学 · 物理学 2009-11-13 A. Mialitsin , J. S. Kim , R. K. Kremer , G. Blumberg

A comparison of experimentally observed Raman scattering data with Raman line-shapes, generated theoretically using phonon confinement model, has been carried out to understand the sensitivity of different Raman spectral parameters on…

介观与纳米尺度物理 · 物理学 2020-03-20 Neeshu K. M. , Chanchal Rani , Ritika Kaushik , Manushree Tanwar , Ashisha Kumar , Rajesh Kumar

We have investigated the Raman spectrum and excitonic effects of the novel two-dimensional Ta$_2$Ni$_3$Te$_5$ structure. The monolayer is an indirect band gap semiconductor with an electronic band gap value of 0.09 eV and 0.38 eV,…

A consistent semiquantitative theoretical analysis of electronic Raman scattering from many-electron quantum dots under resonance excitation conditions has been performed. The theory is based on random-phase-approximation-like wave…

介观与纳米尺度物理 · 物理学 2009-11-10 Alain Delgado , Augusto Gonzalez , D. J. Lockwood