相关论文: Nucleation of Ge quantum dots on the Si(001) surfa…
Structural models of growing Ge hut clusters---pyramids and wedges---are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is…
We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the…
In situ morphological investigation of the {105} faceted Ge islands on the Si(001) surface (hut clusters) have been carried out using an ultra high vacuum instrument integrating a high resolution scanning tunnelling microscope and a…
Morphological investigations and classification of Ge hut clusters forming the arrays of quantum dots on the Si(001) surface at low temperatures in the process of the ultrahigh vacuum molecular beam epitaxy have been carried out using in…
We report a direct observation of Ge hut nucleation on Si(001) during UHV MBE. The study was carried out using a UHV instrument coupling MBE chamber and STM which enables the sample study on atomic level at any stage of treatment. Si wafers…
Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of…
Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (<600 deg C)…
Ge hut clusters, which appear during heteroepitaxy of Ge on Si(001), are prototypical examples of islands formed through strain. Experimentally, complete facets are observed to form rapidly, though the mechanism is unknown. We model the…
The initial steps of MBE growth of GaAs on beta 2-reconstructed GaAs(001) are investigated by performing total energy and electronic structure calculations using density functional theory and a repeated slab model of the surface. We study…
The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at…
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room…
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…
The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxation was accompanied by changes in the surface structure of the…
A possibility of pregalactic seeds of the Active Galactic Nuclei can be a nontrivial cosmological consequence of particle theory. Such seeds can appear as Primordial Black Hole (PBH) clusters, formed in the succession of phase transitions…
We report a detailed investigation of the first stages of the growth of self-organized Fe clusters on the reconstructed Au(111) surface by grazing incidence X-ray diffraction. Below one monolayer coverage, the Fe clusters are in "local…
The epitaxial growth process of a high symmetry surface occurs because adatoms meet and nucleate new islands, that eventually coalesce and complete atomic layers. During multilayer growth, nucleation usually takes place on top of terraces…
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very…
Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural defects in the grown epilayer. While Ge growth begins in…
The basic physics of nucleation in solid \hl{single-crystal} nanoparticles is revealed by a phase-field theory that includes surface energy, chemical reactions and coherency strain. In contrast to binary fluids, which form arbitrary contact…
Nucleonic matter displays a quantum liquid structure, but in some cases finite nuclei behave like molecules composed of clusters of protons and neutrons. Clustering is a recurrent feature in light nuclei, from beryllium to nickel. For…