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The zero energy modes induced by vacancies in ABC stacked trilayer graphene are investigated. Depending on the position of the vacancy, a new zero energy solution is realised, different from those obtained in multilayer compounds with…

材料科学 · 物理学 2012-08-31 Eduardo V. Castro , M. Pilar López-Sancho , María A. H. Vozmediano

We report the existence of zero energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wavefunctions of these peculiar surface states. It…

介观与纳米尺度物理 · 物理学 2008-01-16 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , A. H. Castro Neto , F. Guinea

Electronic localization is numerically studied in disordered bilayer graphene with an electric-field induced energy gap. Bilayer graphene is a zero-gap semiconductor, in which an energy gap can be opened and controlled by an external…

介观与纳米尺度物理 · 物理学 2009-11-13 Mikito Koshino

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their…

介观与纳米尺度物理 · 物理学 2018-11-14 W. Jaskólski , M. Pelc , Garnett W. Bryant , Leonor Chico , A. Ayuela

We describe the gated bilayer graphene system when it is subjected to intense terahertz frequency electromagnetic radiation. We examine the electron band structure and density of states via exact diagonalization methods within Floquet…

介观与纳米尺度物理 · 物理学 2015-05-20 D. S. L. Abergel , Tapash Chakraborty

We examine the magnetic properties of the localized states induced by lattice vacancies in bilayer graphene with an unrestricted Hartree-Fock calculation. We show that with realistic values of the parameters and for experimentally…

材料科学 · 物理学 2015-05-13 Eduardo V. Castro , María P. López-Sancho , María A. H. Vozmediano

We consider an armchair bilayer phosphorene that is connected to two hot and cold leads from both sides and study the thermoelectric properties of such a system with periodic vacancies at the middle of nanoribbon and in the armchair…

介观与纳米尺度物理 · 物理学 2023-12-19 S. Jalilvand , S. Sodagar , Z. Noorinejad , H. Karbaschi , M. Soltani

We report the existence of zero energy surface states localized at zigzag edges of $N$-layer graphene. Working within the tight-binding approximation, and using the simplest nearest-neighbor model, we derive the analytic solution for the…

介观与纳米尺度物理 · 物理学 2009-11-13 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos

We have carried out ab initio electronic structure calculations on graphane (hydrogenated graphene) with single and double vacancy defects. Our analysis of the density of states reveal that such vacancies induce the mid gap states and…

材料科学 · 物理学 2010-02-11 Bhalchandra S. Pujari , D. G. Kanhere

We demonstrate that single layer graphene exhibits the electronic structure of a bilayer when it is connected to two gated bilayers. The energy gap characteristic for gated bilayer is induced in the single layer and it persists for…

介观与纳米尺度物理 · 物理学 2019-07-31 Wlodzimierz Jaskolski

Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the…

介观与纳米尺度物理 · 物理学 2012-02-15 F. Freitag , J. Trbovic , M. Weiss , C. Schönenberger

We investigate the electronic confinement in bilayer graphene by topological loops of different shapes. These loops are created by lateral gates acting via gap inversion on the two graphene sheets. For large-area loops the spectrum is well…

介观与纳米尺度物理 · 物理学 2022-01-12 Nassima Benchtaber , David Sánchez , Llorenç Serra

The electronic structure, bonding and magnetism in graphene containing vacancies are studied using density-functional methods. The single-vacancy graphene ground state is spin polarized and structurally flat. The unpolarized state is non…

介观与纳米尺度物理 · 物理学 2008-07-11 M. W. C. Dharma-wardana , Marek Z. Zgierski

A recently constructed model for low lying excitations in bilayer graphene exhibits mid-gap, zero energy modes in its Dirac-like spectrum, when a scalar order parameter takes a vortex profile. We show that these modes persist when the…

强关联电子 · 物理学 2009-11-13 R. Jackiw , S. -Y. Pi

The edge states in the hybrid system of single-layer and double-layer graphene are studied in the tight-binding model theoretically. The edge states in one side of the interface between single-layer and double-layer graphene are shown to…

介观与纳米尺度物理 · 物理学 2012-04-03 Yasumasa Hasegawa , Mahito Kohmoto

Bilayer graphene has attracted considerable interest due to the important role played by many-body effects, particularly at low energies. Here we report local compressibility measurements of a suspended graphene bilayer. We find that the…

介观与纳米尺度物理 · 物理学 2011-05-05 Jens Martin , Benjamin E. Feldman , R. Thomas Weitz , Monica T. Allen , Amir Yacoby

We theoretically studied the Floquet state of gated bilayer graphene, which is irradiated by normally incident focused Gaussian beam with orbital angular momentum (OAM). According to the Floquet theory, in-plane and out-of-plane electric…

介观与纳米尺度物理 · 物理学 2024-04-02 Ma Luo

The resonant behaviour of vacancy states in graphene is well-known but some ambiguities remain concerning in particular the nature of the so-called zero energy modes. Other points are not completely elucidated in the case of low but finite…

材料科学 · 物理学 2013-08-21 François Ducastelle

Minimally twisted bilayer graphene in the presence of an interlayer bias develops a triangular network of valley chiral modes that propagate along the $AB/BA$ interfaces and scatter at the $AA$ regions. The low energy physics of the…

介观与纳米尺度物理 · 物理学 2023-12-07 P. Wittig , F. Dominguez , C. De Beule , P. Recher
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