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相关论文: Local Interlayer Tunneling Between Two-Dimensional…

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State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation…

应用物理 · 物理学 2018-08-01 Yuanchen Chu , Prasad Sarangapani , James Charles , Gerhard Klimeck , Tillmann Kubis

The advent of milli-kelvin scanning tunneling microscopes (STM) with inbuilt magnetic fields has opened access to the study of magnetic phenomena with atomic resolution at surfaces. In the case of single atoms adsorbed on a surface, the…

介观与纳米尺度物理 · 物理学 2012-06-19 Jean-Pierre Gauyacq , Nicolas Lorente , Frederico Dutilh Novaes

We describe a fully ultra-high vacuum compatible scanning tunneling microscope (STM) optimized for radio-frequency signals. It includes in-situ exchangeable tips adapted to high frequency cabling and a standard sample holder, which offer…

介观与纳米尺度物理 · 物理学 2013-02-27 Christian Saunus , Jan Raphael Bindel , Marco Pratzer , Markus Morgenstern

We investigate the electron tunneling into the edge of a clean weakly interacting two-dimensional electron gas. It is shown that the corresponding differential conductance $G(V)$ has a cusp at zero bias, and is characterized by a universal…

凝聚态物理 · 物理学 2009-10-28 L. Shekhtman , L. I. Glazman

Transport properties of bilayer quantum Hall systems at $\nu=1/q$, where $q$ is an odd integer, are investigated. The edge theory is used for the investigation, since tunneling between the two layers is assumed to occur on the edge of the…

凝聚态物理 · 物理学 2009-10-31 Kentaro Nomura , Daijiro Yoshioka

We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe…

材料科学 · 物理学 2007-05-23 A. Depuydt , C. Van Haesendonck , N. S. Maslova , V. I. Panov , V. V. Rakov , S. V. Savinov

Research on two-dimensional van der Waals materials has demonstrated that the layer degree of freedom can significantly alter the physical properties of materials due to the substantial modification of bulk bands. Inspired by this concept,…

Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels…

介观与纳米尺度物理 · 物理学 2024-09-19 Christian Marty , Zijin Lei , Saverio Silletta , Christian Reichl , Werner Dietsche , Werner Wegscheider

Virtual element methods (VEMs) without extrinsic stabilization in arbitrary degree of polynomial are developed for second order elliptic problems, including a nonconforming VEM and a conforming VEM in arbitrary dimension. The key is to…

数值分析 · 数学 2023-09-25 Chunyu Chen , Xuehai Huang , Huayi Wei

Using low-temperature scanning tunneling spectroscopy applied to the Cs-induced two-dimensional electron system (2DES) on p-type InSb(110), we probe electron-electron interaction effects in the quantum Hall regime. The 2DES is decoupled…

介观与纳米尺度物理 · 物理学 2011-04-18 S. Becker , C. Karrasch , T. Mashoff , M. Pratzer , M. Liebmann , V. Meden , M. Morgenstern

Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been…

Developing alternative paradigms of electronics beyond silicon technology requires the exploration of fundamentally new physical mechanisms, such as the valley specific phenomena in hexagonal two-dimensional materials. We realize ballistic…

介观与纳米尺度物理 · 物理学 2018-12-11 Jing Li , Rui-Xing Zhang , Zhenxi Yin , Jianxiao Zhang , Kenji Watanabe , Takashi Taniguchi , Chaoxing Liu , Jun Zhu

We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x.…

Tunneling spectroscopy of epitaxial (100) oriented \chem{YBa_2Cu_3O_{7-\delta}} films was performed using an STM at 4.2 K. On atomically smooth areas, tunneling spectra revealing clear U-shaped gaps with relatively low zero bias conductance…

超导电性 · 物理学 2009-11-10 A. Sharoni , G. Leibovitch , A. Kohen , R. Beck , G. Deutscher , G. Koren , O. Millo

In two dimensional electron systems with Coulomb or dipolar interactions, a direct transition, whether first or second order, from a liquid to a crystalline state is forbidden. As a result, between these phases there must be other…

介观与纳米尺度物理 · 物理学 2009-11-11 B. Spivak , S. Kivelson

By using different widths for two AlAs quantum wells comprising a bilayer system, we force the X-point conduction-band electrons in the two layers to occupy valleys with different Fermi contours, electron effective masses, and g-factors.…

介观与纳米尺度物理 · 物理学 2009-11-10 K. Vakili , Y. P. Shkolnikov , E. Tutuc , E. P. De Poortere , M. Shayegan

The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in…

Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid…

介观与纳米尺度物理 · 物理学 2019-01-10 Kaushini Wickramasinghe , William Mayer , Joseph Yuan , Tri Nguyen , Lucy Jiao , Vladimir Manucharyan , Javad Shabani

One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid…

We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner…

介观与纳米尺度物理 · 物理学 2021-06-02 Leonardo Lucchesi , Gaetano Calogero , Gianluca Fiori , Giuseppe Iannaccone