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The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants…

We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of…

介观与纳米尺度物理 · 物理学 2020-09-09 Yongxin Zeng , A. H. MacDonald

We identify the physics behind the results of recent measurements [W. Kang et al., Nature 403, 59 (2000)] of electron transfer between the edges of two two-dimensional electron systems (2DES). We find that a consistent explanation of all of…

介观与纳米尺度物理 · 物理学 2015-06-24 Shinji Nonoyama , George Kirczenow

We investigate one dimensional models (the Blonder, Tinkham, Klapwijk model and a tight-binding model) of non local transport at normal metal / superconductor (NS) double interfaces. We find a negative elastic cotunneling crossed…

介观与纳米尺度物理 · 物理学 2007-05-23 S. Duhot , R. Mélin

Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers…

We present the design and implementation of a side entry laser system designed for an ultra-high vacuum scanning transmission electron microscope. This system uses a versatile probe design enclosed in a vacuum envelope such that parts can…

This study explores the application of Convolutional Autoencoders (CAEs) for analyzing and reconstructing Scanning Tunneling Microscopy (STM) images of various crystalline lattice structures. We developed two distinct CAE architectures to…

We report a device fabrication strategy of making multi-terminal electrical contacts on small (< 1 mm) bulk quantum materials using lithography-based techniques for electrical transport studies. The crystals are embedded in a polymeric…

材料科学 · 物理学 2024-04-23 Huandong Chen , Amir Avishai , Jayakanth Ravichandran

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor…

介观与纳米尺度物理 · 物理学 2014-03-05 Mingda Li , David Esseni , Gregory Snider , Debdeep Jena , Huili Grace Xing

The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to…

介观与纳米尺度物理 · 物理学 2015-06-23 B. Voisin , J. Salfi , J. Bocquel , R. Rahman , S. Rogge

Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices…

Scanning tunneling microscopy (STM) can be used to detect inelastic spin transitions in magnetic nano-structures comprising only a handful of atoms. Here we demonstrate that STM can uniquely identify the electrostatic spin crossover effect,…

介观与纳米尺度物理 · 物理学 2015-06-15 Aaron Hurley , Nadjib Baadji , Stefano Sanvito

We present a fast and efficient tight-binding (TB) method for simulating scanning tunneling microscopy (STM) imaging of adsorbate molecules on ultrathin insulating films. Due to the electronic decoupling of the molecule from the metal…

材料科学 · 物理学 2015-05-13 Antti Korventausta , Sami Paavilainen , Eeva Niemi , Jouko Nieminen

A new mechanism of tunnelling at macroscopic distances is proposed for a wave packet localized in one-dimensional disordered potential with mirror symmetry, V(-x)=V(x). Unlike quantum tunnelling through a regular potential barrier, which…

无序系统与神经网络 · 物理学 2012-05-15 E. Diez , F. Izrailev , A. A. Krokhin , A. Rodriguez

Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. We map the spatial pattern of the Bi impurity state, which originates from Bi…

Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the…

Twistronics rooted in the twist operation towards bilayer van der Waals crystals is of both theoretical and technological importance. The realize of the correlated electronic behaviors under this operation encourages enormous effort to the…

介观与纳米尺度物理 · 物理学 2018-11-22 Yu-Hao Shen , Wen-Yi Tong , He Hu , Chun-Gang Duan

We describe a tunneling spectroscopy technique in a double bilayer graphene heterostructure where momentum-conserving tunneling between different energy bands serves as an energy filter for the tunneling carriers, and allows a measurement…

介观与纳米尺度物理 · 物理学 2021-09-13 Nitin Prasad , G. William Burg , Kenji Watanabe , Takashi Taniguchi , Leonard F. Register , Emanuel Tutuc

Optical lattices have proven to be powerful systems for quantum simulations of solid state physics effects. Here we report a proof-of-principle experiment simulating effects predicted by relativistic wave equations with ultracold atoms in a…

量子物理 · 物理学 2013-08-14 Tobias Salger , Sebastian Kling , Christopher Grossert , Martin Weitz

The analysis of Fourier-transformed scanning-tunneling-microscopy (STM) images with subatomic resolution is a common tool for studying properties of quasiparticle excitations in strongly correlated materials. While Fourier amplitudes are…

强关联电子 · 物理学 2016-11-30 Emanuele G. Dalla Torre , Yang He , Eugene Demler