相关论文: Valley dependent many-body effects in 2D semicondu…
Electronic correlations could have significant impact on the material properties. They are typically pronounced for localized orbitals and enhanced in low-dimensional systems, so two-dimensional (2D) transition metal compounds could be a…
Using a combination of ground state quantum Monte-Carlo and finite size scaling techniques, we perform a systematic study of the effect of Coulomb interaction on the localisation length of a disordered two-dimensional electron gas. We find…
Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also…
Proceeding from the simplest field theoretical model of 2D metal, the normal phase Green functions of the weakly interacting fermions and the order parameter fluctuations (responsible for the attraction between fermions) are obtained. It is…
Motivated by a recent experimental observation of a nodal liquid on both single crystals and thin films of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ by Chatterjee \emph{et al.} [Nature Physics \textbf{6}, 99 (2010)], we perform a field-theoretical…
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron…
Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and…
We report magneto-absorption spectroscopy of gated WSe$_2$ monolayers in high magnetic fields up to 60~T. When doped with a 2D Fermi sea of mobile holes, well-resolved sequences of optical transitions are observed in both $\sigma^\pm$…
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface…
We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of…
2D materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing to explore novel phenomena and applications, but have been largely overlooked up to date. Here, using first-principles…
We show that there are qualitative differences between the temperature dependence of the spin and charge correlations in the normal state of the 2D attractive Hubbard model using quantum Monte Carlo simulations. The one-particle density of…
We develop a theory for the optical conductivity of doped multilayer graphene including the effects of electron-electron interactions. Applying the quantum kinetic formalism, we formulate a set of pseudospin Bloch equations that governs the…
Quantum many-body systems with sufficiently strong disorder can exhibit a non-equilibrium phenomenon, known as the many-body localization (MBL), which is distinct from conventional thermalization. While the MBL regime has been extensively…
Using time-resolved optical Kerr rotation, we measure the low temperature valley dynamics of resident electrons and holes in exfoliated WSe$_2$ monolayers as a systematic function of carrier density. In an effort to reconcile the many…
We calculate numerically the quasiparticle effective mass (m*) renormalization as a function of temperature and electron density in two- and three-dimensional electron systems with long-range Coulomb interaction. In two dimensions, the…
The 2-D electron system (2DES) in Si metal-oxide field-effect transistors (MOSFETS) consists of two distinct electron fluids interacting with each other. We calculate the total energy as a function of the density $n$, and the spin…
The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…
We find that the spin susceptibility of a two-dimensional electron system with valley degeneracy does not grow critically at low densities, at variance with experimental results [A. Shashkin et al., Phys. Rev. Lett. 96, 036403 (2006)]. We…
A full, nonperturbative renormalization group analysis of interacting electrons in a graphite layer is performed, in order to investigate the deviations from Fermi liquid theory that have been observed in the experimental measures of a…