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相关论文: Carbon Based Resistive Memory

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The abundant bonding possibilities of Carbon stimulate the design of numerous carbon allotropes, promising the foundation for exploring structure-functionality relationships. Herein, utilizing the space bending strategy, we successfully…

原子物理 · 物理学 2024-01-25 Linfeng Yu , Yi Zhang , Jianzhou Lin , Kexin Dong , Xiong Zheng , Zhenzhen Qin , Guangzhao Qin

Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…

新兴技术 · 计算机科学 2016-12-20 Xinyu Wu , Vishal Saxena

Refractory nanophotonics, or nanophotonics at high temperatures, can revolutionize many applications, including data storage and waste heat recovery. In particular, nanophotonic devices made from hyperbolic materials are promising due to…

光学 · 物理学 2020-01-16 Weilu Gao , Chloe F. Doiron , Xinwei Li , Junichiro Kono , Gururaj V. Naik

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…

材料科学 · 物理学 2016-06-23 Jianxin Shen , Junzhuang Cong , Dashan Shang , Yisheng Chai , Shipeng Shen , Kun Zhai , Young Sun

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible…

Graphene, one of the strongest materials ever discovered, triggered the exploration of many 2D materials in the last decade. However, the successful synthesis of a stable nanomaterial requires a rudimentary understanding of the relationship…

We present a comprehensive first-principles investigation of a novel carbon allotrope characterized by quasi-tetragonal atomic motifs and quasi-two-dimensional structural behavior. Structural analysis reveals an open framework composed of…

Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing metal-to-insulator transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and…

材料科学 · 物理学 2025-07-08 Huandong Chen , Jayakanth Ravichandran

Besides graphite and diamond, the solid allotropes of carbon in sp2 and sp3 hybridization, the possible existence of a third allotrope based on the sp-carbon linear chain, the Carbyne, has stimulated researchers for a long time. The advent…

介观与纳米尺度物理 · 物理学 2018-04-20 Carlo S. Casari , Alberto Milani

Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…

强关联电子 · 物理学 2015-01-15 H. Oike , F. Kagawa , N. Ogawa , A. Ueda , H. Mori , M. Kawasaki , Y. Tokura

Neuromorphic computing circuits can be realized using memristors based on low-dimensional materials enabling enhanced metal diffusion for resistive switching. Here, we investigate memristive properties of vertically aligned MoS$_2$…

I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1-x)O3 (PZT)…

介观与纳米尺度物理 · 物理学 2015-06-05 Maksym Strikha

Organic electronics is very promising due to the flexibility, modifiability as well as variety of the available organic molecules. Efforts are going on to use organic materials for the realization of memory devices. In this regard resistive…

应用物理 · 物理学 2020-05-05 Bapi Dey , Surajit Sarkar , Hritinava Banik , Syed Arshad Hussain

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…

Fully CMOS-compatible photonic memory holding devices hold a potential in a development of ultrafast artificial neural networks. Leveraging the benefits of photonics such as high-bandwidth, low latencies, low-energy interconnect and high…

光学 · 物理学 2023-08-02 Jacek Gosciniak , Jacob B. Khurgin

Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…

介观与纳米尺度物理 · 物理学 2014-08-04 S. Narayana Jammalamadaka , Johan Vanacken , V. V. Moshchalkov

The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. We report the first integration of high-dielectric oxide films…

Recent advances in optics have shown that solitons have a great potential for upgrading the future optical systems which demand fast and reliable data transfer. Along side Different architectures have evolved to realize an optical computer.…

综合物理 · 物理学 2011-01-18 Mohd Abubakr , R. M. Vinay

Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…

We use large scale ab-initio calculations to describe electronic structures of graphene, graphene nanoribbons, and carbon nanotubes periodically perforated with nanopores. We disclose common features of these systems and develop a unified…

介观与纳米尺度物理 · 物理学 2011-07-25 Artem Baskin , Petr Kral