相关论文: A crystal cleavage mechanism for UHV STM

Scanning Thermal Microscopy (SThM) uses micromachined thermal sensors integrated in a force sensing cantilever with a nanoscale tip can be highly useful for exploration of thermal management of nanoscale semiconductor devices. As well as…

Scanning Thermal Microscopy (SThM) is a scanning probe technique aimed at quantitative characterization of local thermal properties at the length scale down to tens of nanometers. With many probe designs and approaches to interpretation of…

The 10-nm-scale structure in silicon cleavage is studied by the quantum mechanical calculations for large-scale electronic structure. The cleavage process on the order of 10 ps shows surface reconstruction and step formation. These…

Crystal lattice can trap and channel particle beams along major crystallographic directions. In a bent crystal, the channelled particles follow the bend. This makes a basis for an elegant technique of beam steering by means of bent…

Scanning Thermal Microscopy (SThM) has become an important measurement tool for characterizing the thermal properties of materials at the nanometer scale. This technique requires a SThM probe that combines an Atomic Force Microscopy (AFM)…

Heavy crystal scintillators are used widely in HEP experiments for precision measurements of photons and electrons. Future HEP experiments, however, require crystal scintillators of more bright, more fast, more radiation hard and less cost.…

Stubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In…

We report a homebuilt ultra-high-vacuum (UHV) rotating sample manipulator with cryogenic cooling. The sample holder is thermally anchored to a built-in cryogenic cold head through flexible copper beryllium strips, permitting continuous…

New crystal technique - array of bent strips and a fan-type reflector, based on thin straight plates - have been used for research of extraction and collimation a circulating beam in the U-70 accelerator at the energy 50 GeV and 1.3 GeV. It…

Simulation of the CERN crystal-extraction experiments at the SPS, including the real crystal geometry and SPS parameters, as well as multiple turns and passes, has been performed. Two crystals with different geometry have been tried. We…

Localized spin states in conventional superconductors at low temperatures are expected to have long decoherence time due to the strong suppression of spin relaxation channels. We propose a scanning tunneling microscopy (STM) experiment…

We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating…

Spectroscopic-imaging scanning tunneling microscopy is a powerful technique to study quantum materials, with the ability to provide information about the local electronic structure with subatomic resolution. However, as most spectroscopic…

Various new phenomena emerge in quantum materials under elastic deformations, such as hydrostatic or uniaxial stresses. In particular, using uniaxial strain or stress can help to tune or uncover specific structural or electronic orders in…

A spectroscopic imaging-scanning tunneling microscope (SI-STM) allows the atomic scale visualization of surface electronic and magnetic structure of novel quantum materials with high energy resolution. To achieve the optimal performance,…

Here we describe the implementation and calibration of a streaked visible spectrometer (SVS) for optical pyrometry and emission/absorption spectroscopy on light gas gun platforms in the UC Davis Shock Compression Laboratory. The diagnostic…

Often a surface sensitive analytical technique in combination with sample erosion by inert ion sputtering is used for compositional in-depth analysis of solid state samples. Layer by layer the sample gets eroded and then the composition of…

Band profiles of electronic devices are of fundamental importance in determining their properties. A technique that can map the band profile of both the interior and edges of a device at the nanometer scale is highly demanded. Conventional…

This paper outlines the results from experiments performed to gain further information about the structure and properties of cleaved silicon surfaces, using vacuum cleavage luminescence detection methods. The experiments involved detecting…

Using a computer model for the crystal extraction, we investigate the bent-crystal parameters optimal for the extraction experiment. The optimal crystal curvature is found to be near 1 GeV/cm (for pv/R), i.e. a factor of 2--3 higher than…