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We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…

材料科学 · 物理学 2011-10-05 M. Tran , H. Jaffres , C. Deranlot , J. -M. George , A. Fert , A. Miard , A. Lemaitre

Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…

介观与纳米尺度物理 · 物理学 2020-05-20 Olya A. Ilinskaya , Danko Radic , Hee Chul Park , Ilya V. Krive , Robert I. Shekhter , Mats Jonson

We show that electron tunneling from edge states in two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization $P$ can be very close to…

介观与纳米尺度物理 · 物理学 2012-09-27 Aleksei A. Sukhanov , Vladimir A. Sablikov

Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…

介观与纳米尺度物理 · 物理学 2015-06-12 Sarmita Majumder , Bartek Kardasz , George Kirczenow , Anthony SpringThorpe , Karen L. Kavanagh

We show that the electron spin polarization generated by an electrical current may have its direction controlled and magnitude amplified by periodic optical excitation. The electrical and optical spin control methods were combined and…

介观与纳米尺度物理 · 物理学 2014-07-17 Felix G. G. Hernandez , Gennady M. Gusev , Askhat K. Bakarov

The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…

介观与纳米尺度物理 · 物理学 2009-09-25 C. J. Hill , X. Cartoixa , R. A. Beach , D. L. Smith , T. C. McGill

We show that an initially unpolarized electron flow acquires spin polarization after passing through a lateral barrier in two-dimensional (2D) system with spin-orbit interaction (SOI) even if the current is directed normally to the barrier.…

介观与纳米尺度物理 · 物理学 2009-02-26 Yurii Ya. Tkach , Vladimir A. Sablikov , Aleksei A. Sukhanov

Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the…

介观与纳米尺度物理 · 物理学 2009-11-10 Yongqiang Xue , Mark A. Ratner

The transmission of a pump laser resonant with the lower polariton branch of a semiconductor microcavity is shown to be highly dependent on the degree of circular polarization of the pump. Spin dependent anisotropy of polariton-polariton…

While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…

The Andreev reflection probability for a ferromagnet/isolator/superconductor (FIS) contact at the arbitrary spin-dependent amplitudes of the electron waves transmitted through and reflected from the potential barrier is found. It is shown…

超导电性 · 物理学 2009-11-13 B. P. Vodopyanov

The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…

介观与纳米尺度物理 · 物理学 2009-11-10 Ali A. Shokri , Alireza Saffarzadeh

We calculate the tunneling conductance \sigma between the surface states on the opposite sides of the ultra-thin film of a topological insulator in a parallel magnetic field B_y. The parallel magnetic produces a relative shift of the…

介观与纳米尺度物理 · 物理学 2012-10-05 Sergey S. Pershoguba , Victor M. Yakovenko

We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit…

介观与纳米尺度物理 · 物理学 2009-09-10 R. Raimondi , P. Schwab

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the…

材料科学 · 物理学 2009-11-07 A. G. Petukhov , D. O. Demchenko , A. N. Chantis

Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions…

材料科学 · 物理学 2015-05-20 D. Tomer , S. Rajput , L. J. Hudy , C. H. Li , L. Li

We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…

应用物理 · 物理学 2024-03-22 Baisen Yu , Shoichi Sato , Masaaki Tanaka , Ryosho Nakane

We present a theoretical analysis of the recent experimental results of Thomas et al on transport properties of spin polarized quantum wires. We suggest an explanation of the observed deviations of the conductance from the universal value…

强关联电子 · 物理学 2008-02-03 D. Schmeltzer , E. Kogan , R. Berkovits , M. Kaveh

Spin-polarized transport is investigated in normal metal-superconductor (NS) junctions as a function of interface transmissivity as well as temperature when the density of states of a superconductor is Zeeman-split in response to an…

介观与纳米尺度物理 · 物理学 2008-04-03 F. Giazotto , F. Taddei

Optical orientation in the strained semiconductor superlattices is investigated theoretically. The dependence of the features in spin-polarization spectra on the structure parameters is clarified. The value of polarization in the first…

材料科学 · 物理学 2009-11-10 A. V. Subashiev , L. G. Gerchikov , A. I. Ipatov