相关论文: Spin polarization control through resonant states …

Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and sign of their spin-detection sensitivities can be widely tuned with the voltage bias applied across the Fe/GaAs interface. Experiments and…

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…

Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step…

We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs…

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin density…

We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…

The helicity of a circularly polarized light beam may be determined by the spin direction of photo-excited electrons in a III-V semiconductor. We present a theoretical demonstration how the direction of the ensuing electron spin…

We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…

A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…

We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…

A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases…

The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…

Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…

Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs…

The electronic and magnetic properties of Fe/GaAs(001) magnetic junctions are investigated using first-principles density-functional calculations. Abrupt and intermixed interfaces are considered, and the dependence of charge transfer,…

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the…

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…

It is shown that the Kerr rotation of spin-polarized electrons is modulated by the distance of the electrons from the sample surface. Time-resolved Kerr rotation of optically-excited spin-polarized electrons in the depletion layer of…

We calculate the current spin polarisation and the interface resistance of Fe/GaAs and Fe/ZnSe (001) spin injection junctions from first principles, including also the possibility of a Schottky barrier. From our results of interface…