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Graphene with high carrier mobility \mu\ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor…

介观与纳米尺度物理 · 物理学 2012-03-08 A. K. M. Newaz , Yevgeniy S. Puzyrev , Bin Wang , Sokrates T. Pantelides , Kirill I. Bolotin

We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate…

介观与纳米尺度物理 · 物理学 2012-08-28 S. Das Sarma , Qiuzi Li

We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the…

介观与纳米尺度物理 · 物理学 2009-05-29 S. Adam , E. H. Hwang , E. Rossi , S. Das Sarma

We discuss various scattering mechanisms for Dirac fermions in single-layer graphene. It is shown that scattering on a short-range potential (due to, for example, neutral impurities) is mostly irrelevant for electronic quality of graphene,…

介观与纳米尺度物理 · 物理学 2007-12-06 M. I. Katsnelson , A. K. Geim

Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

材料科学 · 物理学 2008-05-11 S. Adam , S. Das Sarma

The effect of various dielectrics on charge mobility in single layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity…

材料科学 · 物理学 2015-05-13 Aniruddha Konar , Tian Fang , Debdeep Jena

We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of…

介观与纳米尺度物理 · 物理学 2015-06-05 Zhun-Yong Ong , Massimo V. Fischetti

Experimentally produced graphene sheets exhibit a wide range of mobility values. Both extrinsic charged impurities and intrinsic ripples (corrugations) have been suggested to induce long-range disorder in graphene and could be a candidate…

介观与纳米尺度物理 · 物理学 2016-05-13 Zheyong Fan , Andreas Uppstu , Ari Harju

Graphene is a fascinating material for exploring fundamental science questions as well as a potential building block for novel electronic applications. In order to realize the full potential of this material the fabrication techniques of…

介观与纳米尺度物理 · 物理学 2017-08-23 Xu Du , Ivan Skachko , Eva Y. Andrei

We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of about 1% with respect to the G peak. We evaluated…

介观与纳米尺度物理 · 物理学 2010-10-15 Z. H. Ni , L. A. Ponomarenko , R. R. Nair , R. Yang , S. Anissimova , I. V. Grigorieva , F. Schedin , Z. X. Shen , E. H. Hill , K. S. Novoselov , A. K. Geim

Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as…

介观与纳米尺度物理 · 物理学 2008-03-15 Shaffique Adam , E. H. Hwang , S. Das Sarma

A large variability of carrier mobility of graphene-based field effect transistors hampers graphene science and technology. We determine the scattering strength of the dominant scatterer responsible for the variability of graphene-based…

介观与纳米尺度物理 · 物理学 2015-07-27 Jyoti Katoch , Duy Le , Simranjeet Singh , Rahul Rao , Talat S. Rahman , Masa Ishigami

The effect of Coulomb scattering on graphene conductivity in field effect transistor structures is discussed. Inter-particle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into…

介观与纳米尺度物理 · 物理学 2009-11-13 V. Vyurkov , V. Ryzhii

We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are…

介观与纳米尺度物理 · 物理学 2008-01-14 Shaffique Adam , E. H. Hwang , Victor Galitski , S. Das Sarma

We analyze the scattering sector of the Hamiltonians for both gapless and gapped graphene in the presence of a charge impurity using the 2D Dirac equation, which is applicable in the long wavelength limit. We show that for certain range of…

介观与纳米尺度物理 · 物理学 2011-04-07 Kumar S. Gupta , Andjelo Samsarov , Siddhartha Sen

We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy, and determined carrier scattering rate (g) as function of the varied carrier density (n). The n-dependent g(n) was obtained for a series of…

材料科学 · 物理学 2019-11-07 Kwangnam Yu , Jiho Kim , Joo Youn Kim , Wonki Lee , Jun Yeon Hwang , E. H. Hwang , E. J. Choi

We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular we find that the experimentally observed sublinear scaling…

介观与纳米尺度物理 · 物理学 2012-07-10 Qiuzi Li , E. H. Hwang , E. Rossi

Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…

介观与纳米尺度物理 · 物理学 2016-02-23 Suman Sarkar , Kazi Rafsanjani Amin , Ranjan Modak , Amandeep Singh , Subroto Mukerjee , Aveek Bid

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

介观与纳米尺度物理 · 物理学 2010-04-21 S. Das Sarma , E. H. Hwang , E. Rossi

We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of…

介观与纳米尺度物理 · 物理学 2012-02-29 A. A. Kaverzin , A. S. Mayorov , A. Shytov , D. W. Horsell
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