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Here we demonstrate the controlled growth of Bi(110) and Bi(111) films on an (insulating) $\alpha$-Al$_2$O$_3$(0001) substrate by surface X-ray diffraction and X-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K,…

The phase immiscibility and the excellent matching between Ag(001) and Fe(001) unit cells (mismatch 0.8 %) make Fe/Ag growth attractive in the field of low dimensionality magnetic systems. Intermixing could be drastically limited at…

The inherently weak nonlinear optical response of bulk materials remains a fundamental limitation in advancing photonic technologies. Nanophotonics addresses this challenge by tailoring the size and morphology of nanostructures to…

The preparation of Ag 2+x Se thin films with thicknesses between 4 nm and 3000 nm by pulsed laser deposition on single crystalline NaCl and MgO substrates is reported. The films are perfectly dense and show a good lateral uniformity with a…

其他凝聚态物理 · 物理学 2007-11-22 B. Mogwitz , C. Korte , M. von Kreutzbruck , L. Kienle , J. Janek

Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness is reduced to a few layers. Hence, developing a mature…

材料科学 · 物理学 2026-02-27 Qihua Zhang , Maria Hilse , Joshua Bardsley , Morgan Applegate , Stephanie Law

Tin (IV) oxide (SnO2) sols have been synthesized from SnCl2.2H2O precursor solution by applying two different processing conditions. The prepared sols were then deposited on UV-Ozone treated quartz and soda lime glass (SLG) substrates by…

材料科学 · 物理学 2023-01-31 Md. Nur Amin Bitu , Nazmul Islam Tanvir , Suravi Islam , Syed Farid Uddin Farhad

Quench-condensed granular Al films, with normal-state sheet resistance close to 10 k$\Omega/\Box$, display strong hysteresis and ultraslow, non-exponential relaxation in the resistance when temperature is varied below 300 mK. The hysteresis…

强关联电子 · 物理学 2009-10-31 E. Bielejec , Wenhao Wu

MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C.…

超导电性 · 物理学 2009-11-11 S. Chromik , J. Huran , V. Strbik , M. Spankova , I. Vavra , W. Bohne , J. Rohrich , E. Strub , P. Kovac , S. Stancek

Thin films of gold were deposited on single crystalline CaF2 substrates of (100) and (111) orientation by thermal evaporation. The resulting film structure was analyzed by means of atomic force microscopy in dependence of substrate…

材料科学 · 物理学 2007-05-23 Georg Albert , Marco Maccarini , Michael Himmelhaus

Here, we report a detailed method of growing LaAlGe, a non-magnetic Weyl semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and their structural and electrical characterizations. 50 nm thick LaAlGe films were…

材料科学 · 物理学 2020-05-21 Niraj Bhattarai , Andrew W. Forbes , Rajendra P. Dulal , Ian L. Pegg , John Philip

Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…

Silver (Ag) mirrors for astronomical telescopes consist of multiple metallic and dielectric thin films. Furthermore, the topmost surface of such Ag mirrors needs to be covered by a protection coating. While the protection coating is often…

天体物理仪器与方法 · 物理学 2021-07-30 David M. Fryauf , Andrew C. Phillips , Nobuhiko P. Kobayashi

In this paper we report a new sol-gel method for the fabrication of MgB2 films. Polycrystalline MgB2 films were prepared by spin-coating a precursor solution of Mg(BH_4)_2 diethyl ether on (001)Al2O3 substrates followed with annealing in Mg…

超导电性 · 物理学 2015-05-27 Liping Chen , Chen Zhang , Yinbo Wang , Yue Wang , Qingrong Feng , Zizhao Gan , Junzhi Yang , Xingguo Li

We report epitaxial growth and characterization of GaN thin films on sapphire (0001) substrates using low temperature GaN intermediate layer by plasma assisted molecular beam epitaxy (PA-MBE) technique. As grown and annealed GaN thin films…

材料科学 · 物理学 2015-09-09 Mahitosh Biswas

Realizing laterally continuous ultra-thin gold films on transparent substrates is a challenge of significant technological importance. In the present work, formation of ultra-thin gold films on fused silica is studied, demonstrating how…

This paper is devoted to studying the recrystallization of 100 nm thick polycrystalline films of copper and silver. It is found that in copper films deposited by the thermal evaporation method onto a substrate at room temperature, a bimodal…

材料科学 · 物理学 2025-02-04 S. Petrushenko , S. Dukarov , M. Fijalkowski , V. Sukhov

NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active…

超导电性 · 物理学 2022-03-29 John G. Wright , Huili G. Xing , Debdeep Jena

The growth mechanisms of MgB2 films obtained by different methods on various substrates are compared via a detailed cross-sectional scanning electron microscopy (SEM) study. The analyzed films include (a) samples obtained by an ex-situ…

Superconducting thin films have been prepared in a two-step in-situ process, using the Mg-B plasma generated by pulsed laser ablation. The target was composed of a mixture of Mg and MgB2 powders to compensate for the volatility of Mg and…

超导电性 · 物理学 2009-11-07 D. H. A. Blank , H. Hilgenkamp , A. Brinkman , D. Mijatovic , G. Rijnders , H. Rogalla

We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the…

介观与纳米尺度物理 · 物理学 2012-07-03 Cécile Delacour , Luc Ortega , Marc Faucher , Thierry Crozes , Thierry Fournier , Bernard Pannetier , Vincent Bouchiat