相关论文: Current induced resistance change of magnetic tunn…
We show that elastic currents that take into account variations of the tunnel transmitivity with voltage and a large ratio of majority to minority spin densities of states of the $s$ band, can account for the low voltage current anomalies…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of…
Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were…
We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal…
A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between a ferroelectric barrier and magnetic La1-xSrxMnO3 electrode. Using…
An effect is considered of alternating (high-frequency) current on the spin-valve type magnetic junction configuration. The stability with respect to small fluctuations is investigated in the macrospin approximation. When the current…
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show…
The conductance fluctuations of a metallic wire which is interrupted by a small tunnel junction has been explored experimentally. In this system, the bias voltage V, which drops almost completely inside the tunnel barrier, is used to probe…
We have developed a tunneling theory to describe the temperature dependence of tunneling magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) with periodic grating barrier. Through the Patterson function approach, the theory can…
Pulsed spin-torque switching has been studied using single-shot time-resolved electrical measurements in perpendicularly magnetized magnetic tunnel junctions as a function of pulse amplitude and junction size in 50 to 100 nm diameter…
Current-induced switching from metallic to insulating state is observed in phase-separated states of (La_{1-y}Pr_y)_{0.7}Ca_{0.3}MnO_3 (y=0.7) and Nd_{0.5}Ca_{0.5}Mn_{1-z}Cr_zO_3 (z=0.03) crystals. Application of magnetic fields to this…
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…
The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional…
We report an experimental study of the time dependence of resistivity of a La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ ultrathin film in order to elucidate the underlying mechanism for metal-insulator transition and colossal magnetoresistance CMR effect.…
We report a large, quasi-reversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (\gma) is exchange coupled to a hard ferromagnetic metal (MnAs). Our…
A resonant method based on a tunnel-diode oscillator (TDO) for precision measurements of relative impedance changes in materials, is described. The system consists of an effective self-resonant LC-tank circuit driven by a forward-biased…