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相关论文: Phonon renormalisation in doped bilayer graphene

200 篇论文

We report the first Raman scattering measurements of BaC$_6$, SrC$_6$, and YbC$_6$, which along with new data on CaC$_6$, permits a systematic study of the phonons and the electron-phonon interaction within the doped graphene layers of…

强关联电子 · 物理学 2010-06-08 Mark P. M. Dean , Christopher A. Howard , Siddharth S. Saxena , Mark Ellerby

We uncover the interlayer shear mode of multi-layer graphene samples, ranging from bilayer-graphene (BLG) to bulk graphite, and show that the corresponding Raman peak measures the interlayer coupling. This peak scales from~43cm-1 in bulk…

介观与纳米尺度物理 · 物理学 2015-05-28 P. H. Tan , W. P. Han , W. J. Zhao , Z. H. Wu , K. Chang , H. Wang , Y. F. Wang , N. Bonini , N. Marzari , G. Savini , A. Lombardo , A. C. Ferrari

Twisted van der Waals heterostructures unravel a new platform to study strongly correlated quantum phases. The interlayer coupling in these heterostructures is sensitive to twist angles ($\theta$) and key to controllably tune several exotic…

材料科学 · 物理学 2019-12-03 Rahul Debnath , Indrajit Maity , Manish Jain , Arindam Ghosh

Understanding the origin of superconductivity in correlated two-dimensional materials is a key step in leveraging material engineering techniques for next-generation nanoscale devices. The recent demonstration of superconductivity in Bernal…

We present a theory of the influence of band renormalization and excitonic electron-electron interaction effects on the optical conductivity $\sigma(\omega)$ of doped bilayer graphene. Using the Keldysh formalism, we derive a kinetic…

介观与纳米尺度物理 · 物理学 2009-12-05 Wang-Kong Tse , A. H. MacDonald

Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band…

We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as…

材料科学 · 物理学 2015-05-27 Tianhua Yu , Chen-Wei Liang , Changdong Kim , Bin Yu

Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation of the peak intensity as a function of the applied gate…

强关联电子 · 物理学 2010-07-26 E. Cappelluti , L. Benfatto , A. B. Kuzmenko

We report the observation of an intense anomalous peak at 1608 cm$^{-1}$ in the Raman spectrum of graphene associated to the presence of chromium nanoparticles in contact with graphene. Bombardment with an electron beam demonstrates that…

Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…

介观与纳米尺度物理 · 物理学 2016-11-16 Yangbo Zhou , Jakub Jadwiszczak , Darragh Keane , Ying Chen , Dapeng Yu , Hongzhou Zhang

The two-dimensional mapping of the phonon dispersions around the $K$ point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and…

Recent experiments show how a bilayer graphene twisted around a certain magic angle becomes superconducting as it is doped into a region with approximate flat bands. We investigate the mean-field $s$-wave superconducting state in such a…

超导电性 · 物理学 2018-12-19 T. J. Peltonen , R. Ojajärvi , T. T. Heikkilä

We present a systematic theory of acoustic-phonon-mediated superconductivity, which incorporates Coulomb repulsion, explaining the recent experiment in Bernal bilayer graphene under a large displacement field. The acoustic-phonon mechanism…

超导电性 · 物理学 2022-03-18 Yang-Zhi Chou , Fengcheng Wu , Jay D. Sau , Sankar Das Sarma

We derive the frequency shifts and the broadening of $\Gamma$ point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron…

介观与纳米尺度物理 · 物理学 2015-06-19 Mohamed Assili , Sonia Haddad

While the mechanical distortions change the electronic properties of graphene significantly, the effects of electronic manipulation on its mechanical properties have not been known. Using first-principles calculation methods, we show that,…

材料科学 · 物理学 2013-02-20 S. J. Woo , Young-Woo Son

Coherent engineering of landscape potential in crystalline materials is a rapidly evolving research field. Ultrafast optical pulses can manipulate low-frequency shear phonons in van der Waals layered materials through the dynamical dressing…

介观与纳米尺度物理 · 物理学 2023-05-11 Habib Rostami

We study the effect exerted by the electrons on the flexural phonons in graphene, accounting for the attractive interaction created by the exchange of electron-hole excitations. Combining the self-consistent computation of the phonon…

介观与纳米尺度物理 · 物理学 2010-03-18 Pablo San-Jose , Jose González , Francisco Guinea

We study the fine structure of the phonon G peak in the inelastic light scattering spectra of strained graphene in the presence of a quantizing magnetic field. We show that under the conditions of the magnetophonon resonance (MPR), the…

介观与纳米尺度物理 · 物理学 2013-04-17 Oleksiy Kashuba , Vladimir I. Fal'ko

Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its…

介观与纳米尺度物理 · 物理学 2020-08-10 Gwanghyen Ahn , Sunmin Ryu

Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface…