相关论文: Unification of bulk and interface electroresistive…
We simulate the electron transport across the Au(111)-pentacene interface using non-equilibrium Green's functions and density-functional theory (NEGF-DFT), and calculate the bias-dependent electron transmission. We find that the electrical…
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are…
Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation…
Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current…
We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the…
Two-dimensional charge carrier accumulation at oxide heterointerfaces presents a paradigm shift for oxide electronics. Like a capacitor, interfacial charge buildup couples to an electric field across the dielectric medium. To prevent the…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
A rich variety of physical effects in spin dynamics arises at the interface between different magnetic materials. Engineered systems with interlaced magnetic structures have been used to implement spin transistors, memories and other…
A wide variety of experimental results and theoretical investigations in recent years have convincingly demonstrated that several transition metal oxides and other materials, have dominant states that are not spatially homogeneous. This…
Oxide heterostructures are of great interest both for fundamental and applicative reasons. In particular the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ or LaTiO$_3$/SrTiO$_3$ interfaces displays many different physical…
Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the…
We used density functional theory (DFT) calculations to investigate the physical origin of the mechano-chemical response of materials interfaces. Our results show that the mechano-chemical response can be decomposed into the contribution…
We investigate the dramatic switch of resistance in ordered correlated insulators, when driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main…
Charge transport through metal-Mott-insulator interfaces is studied and compared with that through metal-band-insulator interfaces. For band insulators, rectification has been known to occur owing to a Schottky barrier, which is produced by…
The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of…
The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic…
By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge…
The influence of nonequilibrium bulk conditions on the properties of the interfaces exhibited by a kinetic Ising--like model system with nonequilibrium steady states is studied. The system is maintained out of equilibrium by perturbing the…
The proposed switching mechanism is based on an electronically-induced metal-insulator transition occurring in conditions of the excess non-equilibrium carrier density under the applied electric field. First, this mechanism is developed on…
At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed…