相关论文: Study of low energy Si$_5^-$ and Cs$^-$ implantati…

Some results on damage build up in, and amorphization of, Si, induced by 25-30 keV Al$_5^-$, Si$_5^-$ and Cs$^-$ ions, at room temperature, are reported. We show that at low energy, amorphization is a nucleation and growth process, based on…

We have studied the modification in the Surface morphology of the Si(100) surfaces after 1.5 MeV Sb implantation. Scanning Probe Microscopy has been utilized to investigate the ion implanted surfaces. We observe the formation of nano-sized…

Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a…

Self-ion implantation amorphization is an established approach to study the structure and properties of amorphous silicon (a-Si). Fluctuation Electron Microscopy (FEM) has consistently observed Medium-Range Order (MRO) in this system that…

Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each…

200 nm thick SiO2 layers grown on Si substrates and Ge ions of 150 keV energy were implanted into SiO2 matrix with Different fluences. The implanted samples were annealed at 950 C for 30 minutes in Ar ambience. Topographical studies of…

Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…

Modification induced by 110 MeV Ni ion irradiated thin film samples of C60 on Si and quartz substrates were studied at various fluences. The pristine and irradiated samples were investigated using Raman spectroscopy, electrical conductivity…

A 30 nm Pt thin film evaporated onto a Si wafer was sputtered by 8 keV Ar$^{+}$ ions at various ion doses. The evolution of the modified sputtered films was monitored by atomic force microscopy (AFM), high resolution scanning electron…

We show that the ion beam induced incompressible amorphous solid flow in terms of advection transport mechanism leads to the erosion and deposition of atoms at the amorphous/crystalline (a/c) interface resulting in the formation of pattern…

The morphology evolution of Si (100) surfaces under 1200 eV Ar+ ion bombardment at normal incidence with and without metal incorporation is presented. The formation of nanodot patterns is observed only when the stationary Fe concentration…

In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were exposed to 500 eV argon ions. Different…

We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. Scanning Probe Microscope (SPM) has been utilized to investigate the ion implanted InP(111) surfaces. We…

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm$^{-2}$. The cell has a pitch…

The slow advance of a crack in sodo-silicate glasses was studied at nanometer scale by in situ and real time atomic force microscopy (AFM) in a well controlled atmosphere. An enhanced diffusion of sodium ions in the stress gradient field at…

Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9…

Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a…

Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic…

Eight production quality PbWO4 crystals of CMS have been irradiated in a 20 GeV/c proton beam up to fluences of 5.4E13cm-2. The damage recovery in these crystals has been followed for over a year. Comparative irradiations with 60Co photons…

We present a computational study of the void-induced microstructure in amorphous silicon ($\it a$-Si) by generating ultra-large models of $\it a$-Si with a void-volume fraction of 0.3$\%$, as observed in small-angle x-ray scattering (SAXS)…