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相关论文: Dynamics of Density Imbalanced Bilayer Holes in th…

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Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed…

介观与纳米尺度物理 · 物理学 2009-11-10 E. Tutuc , R. Pillarisetty , S. Melinte , E. P. De Poortere , M. Shayegan

Filling factor $\nu=1$ incompressible states in ideal bilayer quantum Hall systems have spontaneous interlayer phase coherence and can be regarded either as easy-plane pseudospin ferromagnets or as condensates of excitons formed from…

介观与纳米尺度物理 · 物理学 2009-11-10 Anton A. Burkov , Yogesh N. Joglekar , Enrico Rossi , Allan H. MacDonald

We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the…

介观与纳米尺度物理 · 物理学 2009-11-10 E. Tutuc , M. Shayegan , D. A. Huse

We study the frictional drag in high mobility, strongly interacting GaAs bilayer hole systems in the vicinity of the filling factor $\nu=1$ quantum Hall state (QHS), at the same fillings where the bilayer resistivity displays a reentrant…

介观与纳米尺度物理 · 物理学 2010-11-03 E. Tutuc , R. Pillarisetty , M. Shayegan

We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state…

介观与纳米尺度物理 · 物理学 2009-09-15 Seyoung Kim , E. Tutuc

Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels…

介观与纳米尺度物理 · 物理学 2024-09-19 Christian Marty , Zijin Lei , Saverio Silletta , Christian Reichl , Werner Dietsche , Werner Wegscheider

Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10 nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vertical and lateral electric transport are measured in the…

介观与纳米尺度物理 · 物理学 2023-10-13 M. L. Davis , S. Parolo , C. Reichl , W. Dietsche , W. Wegscheider

We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $\rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall…

强关联电子 · 物理学 2007-05-23 Xuan P. A. Gao , G. S. Boebinger , A. P. Mills , A. P. Ramirez , L. N. Pfeiffer , K. W. West

We study interacting GaAs hole bilayers in the limit of zero tunneling. When the layers have equal densities, we observe a phase coherent bilayer quantum Hall (QH) state at total filling factor $\nu=1$, flanked by insulating phases at…

介观与纳米尺度物理 · 物理学 2009-11-07 E. Tutuc , S. Melinte , E. P. De Poortere , R. Pillarisetty , M. Shayegan

Finding and understanding non-Fermi liquid transport behaviors are at the core of condensed matter physics. Most of the existing studies were devoted to the monolayer Hubbard model, which is the simplest model that captures essential…

强关联电子 · 物理学 2024-02-27 Yin Shi , Jonathan Schirmer , Long-Qing Chen

We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole…

介观与纳米尺度物理 · 物理学 2009-11-07 M. V. Yakunin , G. A. Alshanskii , Yu. G. Arapov , G. I. Harus , V. N. Neverov , N. G. Shelushinina , O. A. Kuznetsov

We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole…

介观与纳米尺度物理 · 物理学 2022-01-19 A. Tosato , B. M. Ferrari , A. Sammak , A. R. Hamilton , M. Veldhorst , M. Virgilio , G. Scappucci

We report simultaneous quasi-dc magnetotransport and high frequency surface acoustic wave measurements on bilayer two-dimensional electron systems in GaAs. Near strong integer quantized Hall states a strong magnetic field sweep hysteresis…

介观与纳米尺度物理 · 物理学 2017-01-04 J. Pollanen , J. P. Eisenstein , L. N. Pfeiffer , K. W. West

Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…

无序系统与神经网络 · 物理学 2007-05-23 G. Deville , R. Leturcq , D. L'Hote , R. Tourbot , C. J. Mellor , M. Henini

We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…

介观与纳米尺度物理 · 物理学 2009-11-13 Masaaki Nakamura , Lila Hirasawa , Ken-Ichiro Imura

We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir…

材料科学 · 物理学 2015-06-16 W. Zawadzki , A. Raymond , M. Kubisa

Motivated by recent experimental results reporting anomalous drag resistance behavior in dilute bilayer two-dimensional (2D) hole systems in the presence of a magnetic field parallel to the 2D plane, we have carried out a many-body Fermi…

强关联电子 · 物理学 2009-11-10 S. Das Sarma , E. H. Hwang

We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong…

强关联电子 · 物理学 2020-03-18 M. Serlin , C. L. Tschirhart , H. Polshyn , Y. Zhang , J. Zhu , K. Watanabe , T. Taniguchi , L. Balents , A. F. Young

In high-quality solid-state systems at low temperatures, the hydrodynamic or the ballistic regimes of heat and charge transport are realized in the electron and the phonon systems. In these regimes, the thermal and the electric conductance…

介观与纳米尺度物理 · 物理学 2019-09-18 P. S. Alekseev , M. A. Semina

The hysteresis observed in the magnetoresistance of bilayer 2D systems in the quantum Hall regime is generally attributed to the long time constant for charge transfer between the 2D systems due to the very low conductivity of the quantum…

介观与纳米尺度物理 · 物理学 2015-05-20 L. H. Ho , L. J. Taskinen , A. P. Micolich , A. R. Hamilton , P. Atkinson , D. A. Ritchie
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