相关论文: Interface-driven magnetocapacitance in a broad ran…
Strong magnetic field induces at least two phase transitions in graphite beyond the quantum limit where many-body effects are expected. We report on a study using a state-of-the-art non-destructive magnet allowing to attain 90.5 T at 1.4 K,…
Artificial tuning of dielectric parameters can result from interface conductivity in polycrystalline materials. In ferroelectric single crystals, it was already shown that ferroelectric domain walls can be the source of such artificial…
A three-dimensional topological insulator manifests gapless surface modes, described by two-dimensional Dirac equation. We study magnetic textures, such as domain walls and vortices, in a ferromagnetic thin film deposited on a…
We report the first observation of superconductivity in heterostructure consisting of an insulating ferroelectric film (Ba$_{0.8}$Sr$_{0.2}$TiO$_3$) grown on an insulating parent compound of La$_2$CuO$_4$ with [001] orientation. The…
We investigate a magnetization-dependent voltage that appears at the interface between garnets and various metals. The voltage is even in the applied magnetic field and is dependent on the surface roughness and the pressure holding the…
Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the…
Nowadays a wide number of applications based on magnetic materials relies on the properties arising at the interface between different layers in complex heterostructures engineered at the nanoscale. In ferromagnetic/heavy metal multilayers,…
We study the effects of an external magnetic field on the superconducting properties of a quasi-two-dimensional system of Dirac electrons at an arbitrary temperature. An explicit expression for the superconducting gap is obtained as a…
Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental…
Electrostatic charges near the interface bewteen topological (TI) and ordinary (OI) insulators induce magnetic fields in the medium that can be described through the so-called method of image dyons (electric charge - magnetic monopole…
Composite multiferroics, heterostructures of ferromagnetic (FM) and ferroelectric (FE) materials, are characterized by a remarkable magnetoelectric effect at the interface. Previous work has supported the ferromagnetic structure with…
Dielectric constant measurement under magnetic field is an efficient technique to study the coupling between charges and spins in insulating materials. For magnetic oxides, the geometric frustration is known to be a key ingredient to…
Multifunctional oxides are promising materials because of their fundamental physical properties as well as their potential in applications1. Among these materials, multiferroics exhibiting ferroelectricity and magnetism are good candidates…
To investigate order-order interfaces, we perform multimagnetical Monte Carlo simulations of the $2D$ and $3D$ Ising model. Following Binder we extract the interfacial free energy from the infinite volume limit of the magnetic probability…
Two-dimensional (2D) materials showing room-temperature magnetism and high coercivity are desired for combining magnetism with semiconducting properties useful for spintronics. In this work, the magnetic properties of the 1T phase of…
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric…
Nanoparticles of the ferrimagnetic epsilon-Fe2O3 oxide have been synthesized by sol-gel method. Here, we report on the measurements of the dielectric permittivity as a function of temperature, frequency and magnetic field. It is found that,…
Exploring new strategies for controlling the magnetic domain propagation is the key to realize ultrafast, high-density domain wall-based memory and logic devices for next generation computing. These strategies include strain modulation in…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
Ferromagnetic semiconductors discovered in two-dimensional (2D) materials open an avenue for highly integrated and multifunctional spintronics. The Curie temperature (TC) of existed 2D ferromagnetic semiconductors is extremely low and the…