相关论文: Non-volatile resistive switching in dielectric sup…
We report experiments on a superconducting spin switch based on technologically relevant materials as elemental ferromagnetic Co and elemental superconducting Nb. The Co/Nb/Co structure exhibits inverse spin switch effect, can be operated…
The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junctions decreases linearly by a factor of four when their…
We present a new switching mechanism that utilizes the proximity coupling between the surface spin texture of a Weyl semimetal and a superconductor, in a Weyl semimetal/superconductor/Weyl semimetal trilayer heterostructure. We show that…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
Comin et al. [Science 347, 1335 (2015)] have interpreted their resonant X-ray scattering experiment as indicating that charge inhomogeneities in the family of high-temperature superconductors YBa2Cu3O6+y (YBCO) have the character of…
We review and extend a previous study on the symmetry of the superconducting state, stimulated by recent tunneling and Andreev reflection measurements giving robust evidences for the existence of a $d_{x^2-y^2}+id_{xy}$ order parameter in…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides…
We have measured the transport properties of a series of underdoped YBa2Cu3O7 nanowires fabricated with widths of 100-250 nm. We observe large telegraph-like fluctuations in the resistance between the pseudogap temperature T* and the…
Switching on interchain coupling in a system of one-dimensional strongly interacting chains often leads to an ordered state. Quite generally, there is a competition between an insulating charge-density-wave and a superconducting state. In…
Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance…
The electrical resistivity rho_c of the underdoped cuprate superconductor YBCO was measured perpendicular to the CuO_2 planes on ultra-high quality single crystals in magnetic fields large enough to suppress superconductivity. The…
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide…
The $c$-axis resistivity measurements in YBa_2Cu_4O_8 from Hussey et al. for magnetic field orientations along the c-axis as well as within the ab-plane are analyzed and interpreted using the scaling theory for static and dynamic classical…
The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous…
An electrode contact-related mechanism for the operational instability of organic electronic devices is proposed and confirmed via observation of a water-induced change in charge-injection barrier eights at the…
A simple theoretical model is proposed to describe the recent experimental results on formation of induced superconducting state and anomalous tunneling characteristics in selectively doped multilayered nanostructures based on La$_2$CuO$_4$…
We realize superconductor-insulator transitions (SIT) in mechanically exfoliated Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (BSCCO) flakes and address simultaneously their transport properties as well as the evolution of density of states.…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…
Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and…