相关论文: An extensive comparison of anisotropies in MBE gro…
Anisotropy effects can significantly control or modify the ground-state properties of magnetic systems. Yet the origin and the relative importance of the possible anisotropy terms is difficult to assess experimentally and often ambiguous.…
We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered [(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates. In the multilayers where n=5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN, t(TaN),…
The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method…
In magnetic fields applied parallel to the anisotropy axis, the magnetization of Mn$_{12}$ has been measured in response to a field that is swept back and forth across the resonances corresponding to steps $N=4,5,...9$. The fraction of…
We develop the phenomenological theory for uniaxial ferromagnets, and derive explicit formulae for their magnetostriction (MS) and magnetic anisotropy energy (MAE) generated by the magnetoelastic (ME) effects. An analysis of the…
We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the…
We investigate the magneto-conductance (MC) anisotropy in the variable range hopping regime, caused by quantum interference effects in three dimensions. When no spin-orbit scattering is included, there is an increase in the localization…
The longitudinal and transverse resistivities of differently strained (Ga,Mn)As layers are theoretically and experimentally studied as a function of the magnetization orientation. The strain in the series of (Ga,Mn)As layers is gradually…
Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at…
Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on…
The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced…
The anisotropic properties of an optimally doped Nd_{1.85}Ce_{0.15}CuO_{4-\delta} single crystal have been studied both below and above the critical temperature Tc via the resistivity measurement in magnetic field H up to 12 T. By scaling…
Magnetic anisotropy in an antiferromagnet (AFM) with inversion symmetry breaking (ISB) is investigated. The magnetic anisotropy energy (MAE) resulting from the Rashba spin-orbit and s-d type exchange interactions is determined for two…
The substrate contribution to the magnetic anisotropy energy (MAE) of supported nanostructures can be quantified by a site-selective manipulation of the spin-orbit coupling (SOC) and the effective exchange field B_ex. A systematic study of…
We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is…
We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer,…
It is shown within the weak-coupling model that the macroscopic superconducting anisotropy for materials with the gap varying on the Fermi surface cannot be characterized by a single number, unlike the case of clean materials with isotropic…
We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the…
Doping of the graphene lattice with transition metal atoms resulting in high magnetic anisotropy energy (MAE) is an important goal of materials research owing to its potential application in spintronics. In this article, by using…
The magnetotransport in phase-separated (Ga,Fe)N containing $\gamma$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the…