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相关论文: Graphene Synthesis via the High Pressure - High Te…

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We carried out micro-Raman spectroscopy of graphene layers over the temperature range from approximately 80 K to 370 K. The number of layers was independently confirmed by the quantum Hall measurements and atomic force microscopy. The…

材料科学 · 物理学 2008-03-15 I. Calizo , A. A. Balandin , F. Miao , W. Bao , C. N. Lau

Graphene based sheets have stimulated great interest due to their superior mechanical, electrical and thermal properties. A general visualization method that allows quick observation of these single atomic layers would be highly desirable…

材料科学 · 物理学 2009-12-15 Jaemyung Kim , Laura J. Cote , Franklin Kim , Jiaxing Huang

The synthesis of single-wall carbon nanotubes (SWCNTs) of desired diameters and chiralities is critical to the design of nanoscale electronic devices with desired properties.1-6 The existing methods are based on self-assembly, 7-16…

材料科学 · 物理学 2009-11-13 Anton Sidorov , David Mudd , Gamini Sumanasekera , P. J. Ouseph , C. S. Jayanthi , Shi-Yu Wu*

We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon a catalyst system of nanometer thin…

介观与纳米尺度物理 · 物理学 2012-05-23 Pia Juliane Wessely , Frank Wessely , Emrah Birinci , Bernadette Riedinger , Udo Schwalke

Graphene oxide can be used as a precursor to graphene but the quality of graphene flakes is highly heterogeneous. Scanning-Raman-Microscopy (SRM) is used to characterize films of graphene derived from flakes of graphene oxide with an almost…

Hot-filament process was recently employed to convert, totally or partially, few-layer graphene (FLG) with Bernal stacking into crystalline sp$^3$-C sheets at low pressure. Those materials constitute new synthetic carbon nanoforms. The…

材料科学 · 物理学 2019-07-23 Fabrice Piazza , Marc Monthioux , Pascal Puech , Iann C. Gerber

We show the merits of plasma enhanced atomic layer deposition (PEALD) of catalytic substrate for chemical vapour deposition (CVD) graphene growth. The high quality multilayer graphene (MLG) on molybdenum carbide ($MoC_{x}$) thin film…

应用物理 · 物理学 2019-12-06 Eldad Grady , W. M. M. Kessels , Ageeth A. Bol

Graphene layers grown by chemical vapour deposition (CVD) method and transferred from Cu-foils to the oxidized Si-substrates were investigated by spectroscopic ellipsometry (SE), Raman and X-Ray Photoelectron Spectroscopy (XPS) methods. The…

材料科学 · 物理学 2018-02-23 Aarne Kasikov , Tauno Kahro , Leonard Matisen , Margus Kodu , Aivar Tarre , Helina Seemen , Harry Alles

Graphene flakes were produced by nanosecond plasma discharge at atmospheric pressure between an electrode and the surface of distilled water, in which were placed graphite flakes. The discharge ionizes the gas and forms free radicals on the…

Graphene has many unique properties which make it an attractive material for fundamental study as well as for potential applications. In this paper, we report the first experimental study of process-induced defects and stress in graphene…

材料科学 · 物理学 2008-06-04 Zhen Hua Ni , Hao Min Wang , Yun Ma , Johnson Kasim , Yi Hong Wu , Ze Xiang Shen

A versatile Graphene Epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) under diverse growth environments ranging from high vacuum to atmospheric argon pressure.…

材料科学 · 物理学 2024-03-05 S. Mondal , U. J. Jayalekshmi , S. Singh , R. K. Mukherjee , A. K Shukla

Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 {\deg}C. The temperature assisted decomposition of ethylene takes place…

Although theoretical investigations indicate that the successful combination of graphene and diamond would give interesting properties, only a limited number of reports dealing with the subject have been published. Here, we present a rapid…

材料科学 · 物理学 2023-03-22 N. Suntornwipat , A. Aitkulova , V. Djurberg , S. Majdi

Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band…

The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has…

材料科学 · 物理学 2013-09-03 K. C. Yung , W. M. Wu , M. P. Pierpoint , F. V. Kusmartsev

The growth of high-quality Bernal-stacked bilayer graphene (BLG) directly on dielectric substrates is crucial for electronic and optoelectronic applications, but there are still challenges such as poor quality, uncontrollable thickness and…

We synthesized three-dimensional nanoporous graphene films by a chemical vapor deposition method with nanoporous copper as a catalytic substrate. The resulting nanoporous graphene has the same average pore size as the underlying copper…

材料科学 · 物理学 2015-04-20 Zhiqiang Tu , Shangfei Wu , Fan Yang , Yongfeng Li , Liqiang Zhang , Hongwen Liu , Hong Ding , Pierre Richard

In this work we explore mechanical properties of graphene samples of variable thickness. For this purpose, we coupled a high pressure sapphire anvil cell to a micro-Raman spectrometer. From the evolution of the G band frequency with stress…

Very recently we developed an efficient method to calculate the free energy of 2D materials on substrates and achieved high calculation precision for graphene or $\gamma$-graphyne on copper substrates. In the present work, the method was…

材料科学 · 物理学 2019-07-09 Yu-Peng Liu , Bo-Yuan Ning , Le-Cheng Gong , Tsu-Chien Weng , Xi-Jing Ning

We quantify the mechanisms for manganese (Mn) diffusion through graphene in Mn/graphene/Ge (001) and Mn/graphene/GaAs (001) heterostructures for samples prepared by graphene layer transfer versus graphene growth directly on the…