中文
相关论文

相关论文: Evidence for the formation of a Mott state in pota…

200 篇论文

Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In…

强关联电子 · 物理学 2009-09-11 C. Vaju , L. Cario , B. Corraze , E. Janod , V. Dubost , T. Cren , D. Roditchev , D. Braithwaite , O. Chauvet

Electron-phonon-driven charge density waves can in some circumstances allow electronic correlations to become predominant, driving a system into a Mott insulating state. New insights into both the Mott state and preceding charge density…

强关联电子 · 物理学 2021-03-31 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

Potassium is introduced into the crystalline herringbone structure of pentacene searching for a compound showing metallic electronic transport properties and, hopefully, superconductivity at small enough temperatures. Several possible…

材料科学 · 物理学 2017-05-03 A. Guijarro , J. A. Vergés

We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…

强关联电子 · 物理学 2024-07-17 Binoy Krishna De , V. G. Sathe , S. B. Roy

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

Dynamical properties of photoexcited states are theoretically studied in a one-dimensional Mott insulator dimerized by the spin-Peierls instability. Numerical calculations combined with a perturbative analysis have revealed that the lowest…

强关联电子 · 物理学 2009-11-11 Nobuya Maeshima , Kenji Yonemitsu

Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…

材料科学 · 物理学 2018-11-14 L. Craco , M. S. Laad , S. Leoni

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…

强关联电子 · 物理学 2017-01-13 Yoshiaki Sato , Yoshitaka Kawasugi , Masayuki Suda , Hiroshi M. Yamamoto , Reizo Kato

It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two…

强关联电子 · 物理学 2015-06-15 Elias Lahoud , O. Nganba Meetei , K. B. Chaska , A Kanigel , Nandini Trivedi

The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the…

强关联电子 · 物理学 2020-01-06 J. M. Pizarro , M. J. Calderón , E. Bascones

Chemical modification, such as intercalation or doping of novel materials is of great importance for exploratory material science and applications in various fields of physics and chemistry. In the present work, we report the systematic…

Transition metal dichalcogenides exhibit rich phase diagrams dominated by the interplay of superconductivity and charge density waves, which often result in anomalies in the electric transport properties. Here, we employ the ionic gating…

介观与纳米尺度物理 · 物理学 2022-06-28 Erik Piatti , Jessica Montagna Bozzone , Dario Daghero

We elucidate the mechanism by which a Mott insulator transforms into a non-Fermi liquid metal upon increasing disorder at half filling. By correlating maps of the local density of states, the local magnetization and the local bond…

强关联电子 · 物理学 2020-04-08 Joseph C. Szabo , Kyungmin Lee , Vidya Madhavan , Nandini Trivedi

We have studied potassium-intercalated bulk HfS$_2$ and HfSe$_2$ by combining transmission electron energy loss spectroscopy, angle-resolved photoemission spectroscopy and density functional theory calculations. Calculations of the…

介观与纳米尺度物理 · 物理学 2020-07-01 Carsten Habenicht , Jochen Simon , Manuel Richter , Roman Schuster , Martin Knupfer , Bernd Büchner

Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast…

Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing…

强关联电子 · 物理学 2014-10-22 Yukiko Omori , Andreas Rüegg , Manfred Sigrist

Successive quantum transitions in an intermediate regime are shown to exist between the superfluid and Mott insulating states for interacting bosonic atoms in one dimension with a trapping potential. These transitions, which are caused by…

强关联电子 · 物理学 2013-05-29 Shijie Hu , Yuchuan Wen , Xiaoqun Wang , Yue Yu

Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…

高能物理 - 理论 · 物理学 2018-08-03 Tomas Andrade , Alexander Krikun , Koenraad Schalm , Jan Zaanen

In addition to Anderson and Mott localization, intrinsic phase separation has long been advocated as the third fundamental mechanism controlling the doping-driven metal-insulator transitions. In electronic system, where charge neutrality…

强关联电子 · 物理学 2011-05-18 Hanna Terletska , Vladimir Dobrosavljević