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相关论文: Evidence for the formation of a Mott state in pota…

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We consider low-temperature behavior of weakly interacting electrons in disordered conductors in the regime when all single-particle eigenstates are localized by the quenched disorder. We prove that in the absence of coupling of the…

介观与纳米尺度物理 · 物理学 2009-11-11 D. M. Basko , I. L. Aleiner , B. L. Altshuler

The low-temperature metallic phase of 1T-TaS2 may originate from current- and voltage-driven destabilization of the commensurate charge density wave (CDW) in a strongly correlated Mott insulator, alongside the robust yet rarely realized…

Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by…

Using a realistic band structure for twisted WSe$_2 $ materials, we develop a theory for the interaction-driven correlated insulators to conducting metals transitions through the tuning of the filling factor around commensurate fractional…

强关联电子 · 物理学 2021-08-25 Haining Pan , Sankar Das Sarma

We present electron energy-loss spectroscopic measurements of potassium (K) intercalated tungsten diselenide (WSe2). After exposure of pristine WSe2 films to potassium, we observe a charge carrier plasmon excitation at about 0.97 eV, which…

介观与纳米尺度物理 · 物理学 2017-04-05 M. Ahmad , E. Müller , C. Habenicht , R. Schuster , M. Knupfer , B. Büchner

The thermal transport across metal-insulator interface can be characterized by electron-phonon interaction through which an electron lead is coupled to a phonon lead if phonon-phonon coupling at the interface is very weak. We investigate…

材料科学 · 物理学 2013-10-17 Lifa Zhang , Jing-Tao Lü , Jian-Sheng Wang , Baowen Li

We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the…

材料科学 · 物理学 2015-05-14 M. Sirena , A. Zimmers , N. Haberkorn , E. Kaul , L. B. Steren , J. Lesueur , T. Wolf , Y. Le Gall , J. -J. Grob , G. Faini

We theoretically study pump-photon-energy-dependent pathways of a photoinduced dimer-Mott-insulator-to-metal transition, on the basis of numerical solutions to the time-dependent Schr\"odinger equation for the exact many-body wave function…

强关联电子 · 物理学 2015-05-28 Kenji Yonemitsu , Satoshi Miyashita , Nobuya Maeshima

Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the…

The study of nonequilibrium phenomena in interacting lattice systems can provide new perspectives on correlation effects, and information on metastable states of matter. Mott insulators are a promising class of systems for nonequilibrium…

强关联电子 · 物理学 2025-08-05 Yuta Murakami , Denis Golež , Martin Eckstein , Philipp Werner

We present the results of electron delocalization in thin films of finite thickness at finite tem- parature induced by thickness of the film and temparature. The two dimensional results show temparature induced metal-insulator transition…

强关联电子 · 物理学 2014-12-09 R. K. Brojen Singh

We have studied the electrical field induced conductance transition in thin film of Perylenetetracarboxylic dianhydride sandwiched between two metal electrodes, from an insulating state to conducting state with a high ON-OFF ratio in those…

其他凝聚态物理 · 物理学 2007-05-23 Ruchi Agrawal , Subhasis Ghosh

Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next generation energy-efficient electronics. We report a previously unknown, hierarchically ordered state during a Mott transition…

The electrodynamics near the metal-to-insulator transitions (MIT) induced, in V3O5 single crystals, by both temperature (T) and pressure (P) has been studied by infrared spectroscopy. The T- and P-dependence of the optical conductivity may…

We investigate the electrical transport in mesoscopic structures of La$_{0.67}$Ca$_{0.33}$MnO$_3$ in the regime of the metal-insulator transition by fabricating microbridges from strained and unstrained thin films. We measure…

强关联电子 · 物理学 2015-05-19 C. Beekman , J. Zaanen , J. Aarts

Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator -- Change in chemical potential can induce a transition from a metal to a band insulator; strong…

The mechanism that drives a metal-insulator transition in an undoped quasi-one-dimensional Mott insulator is examined in the framework of the Hubbard model with two different hoppings t_{perp 1} and t_{perp 2} between nearest-neighbor…

强关联电子 · 物理学 2011-11-09 M. Tsuchiizu , Y. Suzumura , C. Bourbonnais

Although most metal-insulator transitions in doped insulators are generally viewed as Mott transitions, some systems seem to deviate from this scenario. Alkali metal-ammonia solutions are a brilliant example of that. They reveal a phase…

强关联电子 · 物理学 2009-11-13 Gennady N. Chuev , Pascal Quemerais

Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada , Fakher F. Assaad , Hirokazu Tsunetsugu , Yukitoshi Motome

To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical…

介观与纳米尺度物理 · 物理学 2016-06-15 Ting Chen , K. V. Reich , Nicolaas J. Kramer , Han Fu , Uwe R. Kortshagen , B. I. Shklovskii