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We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function…

介观与纳米尺度物理 · 物理学 2021-10-27 Alfonso Sanchez-Soares , Thomas Kelly , Giorgos Fagas , James C. Greer , Edward Chen

While magnetic solid-state memory has found commercial applications to date, magnetic logic has rather remained on a conceptual level so far. Here, we discuss open challenges of different spintronic logic approaches, which use magnetic…

新兴技术 · 计算机科学 2024-01-19 Christoph Adelmann , Florin Ciubotaru , Fanfan Meng , Sorin Cotofana , Sebastien Couet

We present a feasibility study for loading cold atomic clouds into magnetic traps created by single-wall carbon nanotubes grown directly onto dielectric surfaces. We show that atoms may be captured for experimentally sustainable nanotube…

其他凝聚态物理 · 物理学 2009-11-13 P. G. Petrov , S. Machluf , S. Younis , R. Macaluso , T. David , B. Hadad , Y. Japha , M. Keil , E. Joselevich , R. Folman

Metal catalysts supporting the growth of Single Wall Carbon Nanotubes display different carbon solubilities and chemical reactivities. In order to specifically assess the role of carbon solubility, we take advantage of the physical…

材料科学 · 物理学 2017-02-23 Juan-Manuel Aguiar-Hualde , Yann Magnin , Hakim Amara , Christophe Bichara

Fluorescent semiconducting single-walled carbon nanotubes (SWCNTs) hold considerable promise for photonics. Furthermore, the optical characteristics of the material can be significantly improved by covalent modification, which generates new…

We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is…

凝聚态物理 · 物理学 2010-06-04 S. -J. Park , A. Persaud , J. A. Liddle , J. Nilsson , J. Bokor , D. H. Schneider , I. Rangelow , T. Schenkel

Fine complex light structure, optical singularities and electroconductivty of nematic 5CB doped by multi-walled carbon nanotubes (MWCNTs) were investigated. MWCNTs gather spontaneously to system of micro scale clusters with random fractal…

Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured…

We report the first demonstration that carbon nanotubes can be trapped and manipulated by optical tweezers. This observation is surprising because individual nanotubes are substantially smaller than the wavelength of light, and thus should…

材料科学 · 物理学 2009-11-10 Joseph Plewa , Evan Tanner , Daniel M. Mueth , David G. Grier

A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique…

介观与纳米尺度物理 · 物理学 2009-09-22 V. K. Sangwan , V. W. Ballarotto , M. S. Fuhrer , E. D. Williams

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…

新兴技术 · 计算机科学 2014-04-02 Mostafizur Rahman , Pritish Narayanan , Csaba Andras Moritz

With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off…

凝聚态物理 · 物理学 2009-11-10 S. Heinze , J. Tersoff , Ph. Avouris

We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant…

材料科学 · 物理学 2009-11-10 M. Radosavljevic , J. Appenzeller , Ph. Avouris , J. Knoch

We have measured IV-curves of multiwalled carbon nanotubes using end contacts. At low voltages, the tunneling conductance obeys non-Ohmic power law, which is predicted both by the Luttinger liquid and the environment-quantum-fluctuation…

介观与纳米尺度物理 · 物理学 2019-10-01 R. Tarkiainen , M. Ahlskog , J. Penttilä , L. Roschier , P. Hakonen , M. Paalanen , E. Sonin

An interacting one-dimensional (1D) electron system is predicted to behave very differently than its higher-dimensional counterparts. Coulomb interactions strongly modify the properties away from those of a Fermi liquid, resulting in a…

介观与纳米尺度物理 · 物理学 2009-10-31 M. Bockrath , D. H. Cobden , J. Lu , A. G. Rinzler , R. E. Smalley , L. Balents , P. L. Mceuen

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate…

其他凝聚态物理 · 物理学 2015-06-24 Ali Javey , Jing Guo , Damon B. Farmer , Qian Wang , Erhan Yenilmez , Roy G. Gordon , Mark Lundstrom , Hongjie Dai

Fabrication techniques such as laser patterning offer excellent potential for low cost and large area device fabrication. Conductive polymers can be used to replace expensive metallic inks such as silver and gold nanoparticles for printing…

We investigate linear and nonlinear transport across single-walled carbon nanotube quantum dots weakly coupled to spin-polarized leads. We consider tubes of finite length and small diameter, where not only forward scattering contributions…

介观与纳米尺度物理 · 物理学 2010-03-29 Christoph Schenke , Sonja Koller , Leonhard Mayrhofer , Milena Grifoni

The quantum behaviour of mechanical resonators is a new and emerging field driven by recent experiments reaching the quantum ground state. The high frequency, small mass, and large quality-factor of carbon nanotube resonators make them…

介观与纳米尺度物理 · 物理学 2012-09-11 B. H. Schneider , S. Etaki , H. S. J. van der Zant , G. A. Steele

Advanced electronic device technologies require a faster operation and smaller average power consumption, which are the most important parameters in very large scale integrated circuit design. The conventional Complementary Metal-Oxide…

新兴技术 · 计算机科学 2018-05-11 A. Nagalakshmi , Ch. Sirisha , Dr. D. N. Madhusudana Rao