相关论文: Single particle relaxation time versus transport s…

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…

By solving the kinetic spin Bloch equations, we study the time evolution of the transient spin grating, whose spin polarization varies periodically in real space, confined in (001) GaAs quantum wells. With this study we can investigate the…

We measure spin transport in high mobility suspended graphene (\mu ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (\tau_s ~ 150 ps) and spin relaxation length…

We investigate charge and energy transport in monolayer graphene with smooth finite-range disorder, modeled by soft impurity potentials. Using a continuum Dirac model, we go beyond the Born approximation by computing the exact scattering…

We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the…

Charged impurity (CI) scattering is one of the dominant factors that affect the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity…

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

The dynamical conductivity of interacting multiband electronic systems derived in Ref.[1] is shown to be consistent with the general form of the Ward identity. Using the semiphenomenological form of this conductivity formula, we have…

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…

Scanning tunneling microscopy and spectroscopy in magnetic field was used to study Landau quantization in graphene and its dependence on charge carrier density. Measurements were carried out on exfoliated graphene samples deposited on a…

Using integrated superconducting single photon detectors we probe ultra-slow exciton capture and relaxation dynamics in single self-assembled InGaAs quantum dots embedded in a GaAs ridge waveguide. Time-resolved luminescence measurements…

We study Coulomb drag in double-layer graphene near the Dirac point. A particular emphasis is put on the case of clean graphene, with transport properties dominated by the electron-electron interaction. Using the quantum kinetic equation…

We present in this contribution a theoretical investigation of the spontaneous emission and energy transfer rates between quantum systems placed above a monolayer of conducting graphene. The conditions for strong and weak coupling between a…

We present a detailed numerical study of the electronic properties of single-layer graphene with resonant ("hydrogen") impurities and vacancies within a framework of noninteracting tight-binding model on a honeycomb lattice. The algorithms…

We develop a theory of conductivity of type-II superconductors in the flux flow regime taking into account random spatial fluctuations of the system parameters, such as the gap magnitude $\Delta$(r) and the diffusion coefficient D(r). We…

Using synchronized near-infrared (NIR) and terahertz (THz) lasers, we have performed picosecond time-resolved THz spectroscopy of transient carriers in semiconductors. Specifically, we measured the temporal evolution of THz transmission and…

The quasiparticle scattering rates in high-quality crystals of the quasi-two-dimensional superconductor $\kappa$-(BEDT-TTF)$_2$Cu(NCS)$_2$ ~are studied using the Shubnikov-de Haas effect and MHz penetration-depth experiments. There is…

The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the…

The problem of electron scattering on the one-dimensional complexes is considered. We propose a novel theoretical approach to solution of the transport problem for a quantum graph. In the frame of the developed approach the solution of the…

A Drude-Boltzmann theory is used to calculate the transport properties of bilayer graphene. We find that for typical carrier densities accessible in graphene experiments, the dominant scattering mechanism is overscreened Coulomb impurities…