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Strontium titanate, SrTiO3, a widely used substrate material for electronic oxide thin film devices, has provided many interesting features. In a combination with a similar oxide material, LaAlO3, it has recently received great interest. It…

We report a gradual suppression of the two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface on substitution of chromium at the Al sites. The sheet carrier density at the interface (ns) drops monotonically from 2.2x10(14) cm-2…

强关联电子 · 物理学 2015-06-23 Pramod Kumar , Anjana Dogra , P. P. S. Bhadauria , Anurag Gupta , K. K. Maurya , R. C. Budhani

In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few…

材料科学 · 物理学 2012-10-31 Gervasi Herranz , Florencio Sánchez , Nico Dix , Mateusz Scigaj , Josep Fontcuberta

We report strong localization of 2D electron gas in LaAlO3 / SrTiO3 epitaxial thin-film heterostructures grown on (LaAlO3)0.3-(Sr2AlTaO3)0.7 substrates by using pulsed laser deposition with in-situ reflection high-energy electron…

强关联电子 · 物理学 2015-05-30 T. Hernandez , C. W. Bark , D. A. Felker , C. B. Eom , M. S. Rzchowski

The conducting interface of LaAlO$_3$/SrTiO$_3$ heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2$p$ signal and its angle-dependence we derive that the thickness of the electron gas is much smaller…

We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport…

强关联电子 · 物理学 2013-09-09 S. S. A. Seo , Z. Marton , W. S. Choi , G. W. J. Hassink , D. H. A. Blank , H. Y. Hwang , T. W. Noh , T. Egami , H. N. Lee

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based…

LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological…

The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with…

The observation of a two dimensional electron gas (2DEG) (1, 2), superconductivity (3, 4), magnetic effects (5) and electronic phase separation (6-8) at the interfaces of insulating oxides, especially LaAlO3/SrTiO3, has further enhanced the…

The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive…

强关联电子 · 物理学 2015-07-21 Jun Zhou , Teguh Citra Asmara , Ming Yang , George A. Sawatzky , Yuan Ping Feng , Andrivo Rusydi

To form a conducting layer at the interface between the oxide insulators LaAlO3 and SrTiO3, the LaAlO3 layer on the SrTiO3 substrate must be at least four unit-cells-thick. The LaAlO3 SrTiO3 heterointerface thus formed exhibits various…

We propose a simple analytical model to explain possible appearance of the metallic conductivity in the two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ interface. Our model considers the interface within a macroscopic approach which is usual to…

材料科学 · 物理学 2016-01-20 V. A. Stephanovich , V. K. Dugaev

Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown…

We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems…

介观与纳米尺度物理 · 物理学 2016-07-14 I. Aliaj , I. Torre , V. Miseikis , E. di Gennaro , A. Sambri , A. Gamucci , C. Coletti , F. Beltram , F. M. Granozio , M. Polini , V. Pellegrini , S. Roddaro

Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of…

材料科学 · 物理学 2015-05-19 Yanwu Xie , Christopher Bell , Takeaki Yajima , Yasuyuki Hikita , Harold Y. Hwang

Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial "depth" - remains…

LaAlO3 and SrTiO3 are insulating, nonmagnetic oxides, yet the interface between them exhibits a two-dimensional electron system with high electron mobility,1 superconductivity at low temperatures,2-6 and electric-field-tuned metal-insulator…

超导电性 · 物理学 2015-05-30 J. A. Bert , B. Kalisky , C. Bell , M. Kim , Y. Hikita , H. Y. Hwang , K. A. Moler

The rich electron correlations and highly coherent transport in reconfigurable devices sketched by a conductive atomic force microscope tip at the LaAlO3/SrTiO3 interface have enabled the oxide platform an ideal playground for studying…

介观与纳米尺度物理 · 物理学 2023-06-19 Dawei Qiu , Mengke Ha , Qing Xiao , Zhiyuan Qin , Danqing Liu , Changjian Ma , Guanglei Cheng , Jiangfeng Du

We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid…

强关联电子 · 物理学 2013-07-18 F. Cossu , U. Schwingenschlögl , V. Eyert