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相关论文: Scaling Laws for NanoFET Sensors

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We report a method for probing electromechanical properties of multiwalled carbon nanotubes(CNTs). This method is based on AFM measurements on a doubly clamped suspended CNT electrostatically deflected by a gate electrode. We measure the…

介观与纳米尺度物理 · 物理学 2009-11-11 R. Lefevre , M. F. Goffman , V. Derycke , C. Miko , L. Forro , J. P. Bourgoin , P. Hesto

Sensing technologies have been under research and development for their varied applications from microelectronics to space exploration. With the end of Moores law in sight, there is growing demand for shrinking materials and improving…

材料科学 · 物理学 2016-06-13 E. L. Carter , P. Brown , R. L. Smith , J. Griffin

Quantum sensing techniques have been successful in pushing the sensitivity limits in numerous fields, and hold great promise for scanning probes that study nano-scale devices and novel materials. However, forming a nano-scale qubit that is…

介观与纳米尺度物理 · 物理学 2019-08-23 Ilya Khivrich , Shahal Ilani

We study the electromechanical transduction in nanoelectromechanical actuators and show that the differences in scaling for electrical and mechanical effects lead to an overall non-trivial scaling behavior. In particular, the previously…

应用物理 · 物理学 2020-07-01 Konstantinos Tsoukalas , Babak Vosoughi Lahijani , Søren Stobbe

Silicon nanochannel field effect transistor (FET) biosensors are one of the most promising technologies in the development of highly sensitive and label-free analyte detection for cancer diagnostics. With their exceptional electrical…

After more than 30 years of validation of Moore's law, the CMOS technology has already entered the nanoscale (sub-100nm) regime and faces strong limitations. The nanowire transistor is one candidate which has the potential to overcome the…

介观与纳米尺度物理 · 物理学 2010-08-19 Vijay Sai Patnaik , Ankit Gheedia , M. Jagadesh Kumar

We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale…

介观与纳米尺度物理 · 物理学 2009-11-10 Yongqiang Xue , Mark A. Ratner

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits; many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has…

新兴技术 · 计算机科学 2014-07-10 Mayank Chakraverty

Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…

应用物理 · 物理学 2024-09-30 Chloe Isabella Tsang , Haihui Pu , Junhong Chen

The thermal conductivity of a nanostructure is sensitive to its dimensions. A simple analytical scaling law that predicts how conductivity changes with the dimensions of the structure, however, has not been developed. The lack of such a law…

材料科学 · 物理学 2012-06-26 X. W. Zhou , R. E. Reese

In this letter we perform an experimental study of ionic transport and current fluctuations inside individual Carbon Nanotubes (CNT). The conductance exhibits a power law behavior at low salinity, with an exponent close to 1/3 versus the…

软凝聚态物质 · 物理学 2016-04-20 E. Secchi , A. Nigues , L. Jubin , A. Siria , L. Bocquet

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements…

介观与纳米尺度物理 · 物理学 2011-01-24 N. Clement , K. Nishiguchi , J. F. Dufreche , D. Guerin , A. Fujiwara , D. Vuillaume

Despite the great promise of carbon nanotube field effect transistors (CNT FETs) for applications in chemical and biochemical detection, a quantitative understanding of sensor responses is lacking. To explore the role of electrostatics in…

Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…

介观与纳米尺度物理 · 物理学 2012-07-20 A. N. Vamivakas , Y. Zhao , S. Falt , A. Badolato , J. M. Taylor , M. Atature

In this review article, we focus on emerging nanocantilever based biological sensors and discuss the response of nanocantilevers towards bio-molecules capture. The article guides the reader through various modes of operation (e.g., static…

仪器与探测器 · 物理学 2013-05-30 Ankit Jain , Muhammad Ashraful Alam

We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of…

生物物理 · 物理学 2008-02-14 Yu Chen , Xihua Wang , Mi K. Hong , Shyamsunder Erramilli , Carol Rosenberg , Pritiraj Mohanty

While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an…

介观与纳米尺度物理 · 物理学 2009-11-10 M. Radosavljevic , S. Heinze , J. Tersoff , Ph. Avouris

We report an experimental investigation of the edge effect on the room-temperature transport in graphene nanoribbon and graphene sheet (both single-layer and bilayer). By measuring the resistance scaling behaviors at both low and high…

介观与纳米尺度物理 · 物理学 2011-02-15 Guangyu Xu , Carlos M. Torres , Jianshi Tang , Jingwei Bai , Emil B. Song , Yu Huang , Xiangfeng Duan , Yuegang Zhang , Kang L. Wang

Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and thermal properties. As a result of suppressed phonon…

介观与纳米尺度物理 · 物理学 2010-06-23 Neophytos Neophytou , Martin Wagner , Hans Kosina , Siegfried Selberherr

A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique…

介观与纳米尺度物理 · 物理学 2009-09-22 V. K. Sangwan , V. W. Ballarotto , M. S. Fuhrer , E. D. Williams
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