相关论文: Dynamic Spin-Polarized Resonant Tunneling in Magne…
The subgap conductivity of a normal-superconductor (NS) tunnel junction is thought to be due to tunneling of two electrons. There is a strong interference between these two electrons, originating from the spatial phase coherence in the…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
In itinerant electron ferromagnets spectral weight is transferred at finite temperatures from quasiparticle peaks located at majority and minority-spin band energies to shadow-band peaks. For a given Bloch wavevector and band index, the…
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…
Based on the structure predicted in a ferroelectric tunnel junction in the resent density functional theory study, we investigate the electron transport through the FTJ with asymmetric interfaces, i.e., one interface dipole is pinned and…
We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…
The tunnel magneto-Seebeck effect is the dependence of the thermopower of magnetic tunnel junctions on the magnetic configuration. It is conventionally interpreted in terms of a thermoelectric generalization of the tunnel magnetoresistance.…
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit…
We prepared magnetic tunnel junctions with one ferromagnetic and one superconducting Al-Si electrode. Pure cobalt electrodes were compared with a Co-Fe-B alloy and the Heusler compound Co2FeAl. The polarization of the tunneling electrons…
The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions,…
When a magnetic ion vibrates in a metal, it inevitably introduces a new channel of hybridization with conduction electrons and in general, the vibrating ion induces electric dipole moment. In such a situation, we find that magnetic and…
We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D Topological Insulator (TI). Chiral tunneling across a TI pn junction allows normally…
We investigate electronic thermal rectification in ferromagnetic insulator-based superconducting tunnel junctions. Ferromagnetic insulators coupled to superconductors are known to induce sizable spin splitting in the superconducting density…
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of…
Oscillatory tunneling magnetoresistance (TMR) as a function of spacer thickness is investigated theoretically for a magnetic tunnel junction with a nonmagnetic layer inserted between the tunnel barrier and the ferromagnetic layer. TMR is…
We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $\nu<1$, there is a gap in the current-voltage…
Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the…
Theoretical analysis of the experimental data for the energy levels of two interacting electrons confined by a finite Gaussian potential in a 2D quantum dot and subjected to a uniform magnetic field perpendicular to the plane of the dot is…
We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking…