相关论文: Avalanche Photo-Detection for High Data Rate Appli…
A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 $\mu$m CMOS technology is presented. The SPAD has a depleted absorption volume of approximately 15 $\mu$m x 15 $\mu$m x 18 $\mu$m.…
We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing…
Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in single pad configuration, 2x2…
Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering light near the multiplication region where the electric…
We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of…
We demonstrate an efficient and scalable compressive Raman parallelization scheme based on single-photon avalanche diode (SPAD) arrays to reach pixel dwell times of 23 $\mu$s, representing over 10$\times$ speed-up using the otherwise weak…
With the evolving technology in CMOS integration, new classes of 2D-imaging detectors have recently become available. In particular, single photon avalanche diode (SPAD) arrays allow detection of single photons at high acquisition rates…
The measurement of light characteristics at the single- and few photon level plays a key role in many quantum optics applications. Often photodetection is preceded with the transmission of quantum light over long distances in optical fibers…
Achieving high quantum efficiency (QE) with low dark count is essential for highly sensitive photodetectors (PDs), including single photon avalanche detectors (SPADs). However, high QE requires a thicker absorber region, which leads to high…
Miller formula modified to take into account voltage drop on serial resistor of an avalanche photodiode is considered. It is proven by experimental data that modified Miller formula can describe operation of both regular and micropixel…
The limited number of active pixels in a Geiger-mode Avalanche Photodiode (G-APD) results not only in a non-linearity but also in an additional fluctuation of its response. Both these effects are taken into account to calculate the…
Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device…
We derive the likelihood of a raw signal in a single photon avalanche diode (SPAD), given a fixed photon flux. The raw signal comprises timing of detection events, which are nonlinearly related to the flux. Moreover, they are naturally…
The Visible Light Photon Counter (VLPC) features high quantum efficiency and low pulse height dispersion. These properties make it ideal for efficient photon number state detection. The ability to perform efficient photon number state…
Single-photon detectors in space must retain useful performance characteristics despite being bombarded with sub-atomic particles. Mitigating the effects of this space radiation is vital to enabling new space applications which require…
Large Area Picosecond PhotoDetectors (LAPPDs) are photosensors based on microchannel plate technology with about 400 cm$^2$ sensitive area. The external readout plane of a capacitively coupled LAPPD can be segmented into pads providing a…
InGaAs single-photon avalanche photodiodes (APDs) are key enablers for high-bit rate quantum key distribution. However, the deviation of such detectors from ideal models can open side-channels for an eavesdropper, Eve, to exploit. The…
Traditional CMOS sensors suffer from restricted dynamic range and sub optimal performance under extreme lighting conditions. They are affected by electronic noise in low light conditions and pixel saturation while capturing high…
We propose a protocol for the amplified detection of low-intensity terahertz radiation using Rydberg tweezer arrays. The protocol offers single photon sensitivity together with a low dark count rate. It is split into two phases: during a…
In order to build a new concept of photomultiplier based on silicon technology, design and characterization of 5x5 arrays of a new generation of single photon avalanche diodes (SPAD) manufactured by ST-Microelectronics have been performed.…