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相关论文: Determination of the Mott insulating transition by…

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For a system at a temperature of absolute zero, all thermal fluctuations are frozen out, while quantum fluctuations prevail. These microscopic quantum fluctuations can induce a macroscopic phase transition in the ground state of a many-body…

量子气体 · 物理学 2025-06-27 Markus Greiner , Olaf Mandel , Tilman Esslinger , Theodor W Hänsch , Immanuel Bloch

We investigate the equilibrium and dynamical properties of the Bose-Hubbard model and the related particle-hole symmetric spin-1 model in the vicinity of the superfluid to Mott insulator quantum phase transition. We employ the following…

量子气体 · 物理学 2013-11-11 D. Pekker , B. Wunsch , T. Kitagawa , E. Manousakis , A. S. Sørensen , E. Demler

A new non-perturbative framework for many-body correlated systems is formulated by extending the operator projection method (OPM). This method offers a systematic expansion which enables us to project into the low-energy structure after…

强关联电子 · 物理学 2009-10-31 Shigeki Onoda , Masatoshi Imada

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

Metallic states near the Mott insulator show a variety of quantum phases including various magnetic, charge ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a…

强关联电子 · 物理学 2023-12-05 Kensaku Takai , Youhei Yamaji , Fakher F. Assaad , Masatoshi Imada

The crossover between a metal and a Mott insulator leads to a localization of fermions from delocalized Bloch states to localized states. We experimentally study this crossover using fermionic atoms in an optical lattice by measuring…

量子气体 · 物理学 2016-09-28 J. H. Drewes , E. Cocchi , L. A. Miller , C. F. Chan , D. Pertot , F. Brennecke , M. Köhl

Inspired by the recent discovery of breathing kagome materials \(\rm Nb_3Cl_8\) and \(\rm Nb_3TeCl_7\), we have explored the influence of the breathing effect on the Hubbard model of the kagome lattice. Utilizing the determinant quantum…

强关联电子 · 物理学 2025-08-05 Qingzhuo Duan , Zixuan Jia , Zenghui Fan , Runyu Ma , Jingyao Meng , Bing Huang , Tianxing Ma

The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator…

强关联电子 · 物理学 2007-08-15 M. Civelli , M. Capone , S. S. Kancharla , O. Parcollet , G. Kotliar

A material's phase diagram typically indicates the types of realized long-range orders, corresponding to instabilities in static response functions. In correlated systems, however, key phenomena crucially depend on dynamical processes, too:…

强关联电子 · 物理学 2021-12-07 Léo Gaspard , Jan M. Tomczak

It has been proposed that an extended version of the Hubbard model which potentially hosts rich correlated physics may be well simulated by the transition metal dichalcogenide (TMD) moir\'{e} heterostructures. Motivated by recent reports of…

强关联电子 · 物理学 2022-06-30 Yichen Xu , Xiao-Chuan Wu , Mengxing Ye , Zhu-Xi Luo , Chao-Ming Jian , Cenke Xu

We present a strong-coupling expansion of the Bose-Hubbard model which describes both the superfluid and the Mott phases of ultracold bosonic atoms in an optical lattice. By performing two successive Hubbard-Stratonovich transformations of…

强关联电子 · 物理学 2007-05-23 K. Sengupta , N. Dupuis

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…

We show that the Mott transition occurring in bosonic Hubbard models can be successfully described by a simple variational wave function that contains all important long-wavelength correlations. Within this approach, a smooth…

强关联电子 · 物理学 2007-05-23 Manuela Capello , Federico Becca , Michele Fabrizio , Sandro Sorella

Mott transitions are studied in the two-dimensional Hubbard model by a non-perturbative theory of correlator projection that systematically includes spatial correlations into the dynamical mean-field approximation. Introducing a nonzero…

强关联电子 · 物理学 2009-11-10 Shigeki Onoda , Masatoshi Imada

Some well-established examples of itinerant-electron ferromagnetism in one dimension occur in a Mott-insulating phase. We examine the consequences of doping a ferromagnetic insulator and cou- pling magnons to gapless charge fluctuations.…

强关联电子 · 物理学 2015-04-28 Hudson Pimenta , Luiz N. Oliveira , Rodrigo G. Pereira

This article contains a theoretical overview of the physical properties of antiferromagnetic Mott insulators in spatial dimensions greater than one. Many such materials have been experimentally studied in the past decade and a half, and we…

强关联电子 · 物理学 2009-11-10 Subir Sachdev

We consider an effective Hamiltonian description of critical wetting transitions in systems with short-range forces at a corrugated (periodic) wall. We are able to recover the results obtained previously from a `microscopic'…

软凝聚态物质 · 物理学 2009-10-31 P. S. Swain , A. O. Parry

We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to…

强关联电子 · 物理学 2014-08-15 Rubem Mondaini , Thereza Paiva

The thermodynamic behavior of out-of-equilibrium quantum systems in finite-time dynamics encompasses the description of energy fluctuations, which dictates a series of system's physical properties. In addition, strong interactions in…

量子物理 · 物理学 2020-08-05 Krissia Zawadzki , Roberto M. Serra , Irene D'Amico

In bilayers of semiconducting transition metal dichalcogenides, the twist angle between layers can be used to introduce a highly regular periodic potential modulation on a length scale that is large compared to the unit cell. In such…

材料科学 · 物理学 2022-04-27 N. Götting , F. Lohof , C. Gies