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相关论文: Determination of the Mott insulating transition by…

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We study the filling-driven Mott transition involving the metallic and paramagnetic insulating phases in SU(N) Fermi-Hubbard models, using dynamical mean-field theory (DMFT) and the numerical renormalization group (NRG) as impurity solver.…

强关联电子 · 物理学 2018-05-09 Seung-Sup B. Lee , Jan von Delft , Andreas Weichselbaum

We study a model of a covalent band insulator with on-site Coulomb repulsion at half-filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band…

强关联电子 · 物理学 2009-10-16 Michael Sentef , Jan Kunes , Philipp Werner , Arno P. Kampf

Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied…

We derive new sum rules for the real and imaginary parts of the frequency-dependent Hall constant and Hall conductivity. As an example, we discuss their relevance to the doped Mott insulator that we describe within the dynamical mean-field…

强关联电子 · 物理学 2009-10-31 Ekkehard Lange , Gabriel Kotliar

In condensed matter physics, various mechanisms give rise to distinct insulating phases. The competition and interplay between these phases remain elusive, even for the seemingly most distinguishable band and Mott insulators. In multilayer…

材料科学 · 物理学 2025-02-14 Zijian Lin , Jie Li , Xiaodong Cao , Jingjing Gao , Xuan Luo , Yuping Sun , Yi Lu , Nanlin Wang , Jiandong Guo , Xuetao Zhu

Cold atoms confined in periodic potentials are remarkably versatile quantum systems for implementing simple models prevalent in condensed matter theory. In the current experiment, we realize the 2D Bose-Hubbard model by loading a…

其他凝聚态物理 · 物理学 2012-12-24 I. B. Spielman , W. D. Phillips , J. V. Porto

The role of the electron-phonon interaction in the Holstein-Hubbard model is investigated in the metallic phase close to the Mott transition and in the insulating Mott phase. The model is studied by means of a variational slave boson…

强关联电子 · 物理学 2007-05-23 C. A. Perroni , V. Cataudella , G. De Filippis , V. Marigliano Ramaglia

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…

强关联电子 · 物理学 2015-05-13 A. Sherman , N. Voropajeva

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff

Charge transport through metal-Mott-insulator interfaces is studied and compared with that through metal-band-insulator interfaces. For band insulators, rectification has been known to occur owing to a Schottky barrier, which is produced by…

强关联电子 · 物理学 2009-04-27 Kenji Yonemitsu , Nobuya Maeshima , Tatsuo Hasegawa

The dynamical mean-field theory together with the non-crossing approximation is used to set up a novel scheme to study the electronic structure of strongly correlated electron systems. The non-interacting band structure is obtained from a…

强关联电子 · 物理学 2007-05-23 M. B. Zoelfl , Th. Pruschke , J. Keller , A. I. Poteryaev , I. A. Nekrasov , V. I. Anisimov

We study the magnetic properties around the Mott transition in the Kagom\'e lattice Hubbard model by the cellular dynamical mean field theory combined with quantum Monte Carlo simulations. By investigating the q-dependence of the…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Sei-ichiro Suga , Norio Kawakami , Hirokazu Tsunetsugu

We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…

凝聚态物理 · 物理学 2009-10-28 Stefan Blawid , Hoangh Anh Tuan , Takashi Yanagisawa , Peter Fulde

We report on the investigation of the three-dimensional single-atom-resolved distributions of bosonic Mott insulators in momentum-space. Firstly, we measure the two-body and three-body correlations deep in the Mott regime, finding a…

量子气体 · 物理学 2019-11-13 Cécile Carcy , Hugo Cayla , Antoine Tenart , Alain Aspect , Marco Mancini , David Clément

We calculate the phase diagram of the Bose-Hubbard model on a half-filled ladder lattice including the effect of finite on-site interactions. This shows that the rung-Mott insulator (RMI) phase persists to finite interaction strength, and…

量子气体 · 物理学 2026-02-24 Lorenzo Carfora , Callum W. Duncan , Stefan Kuhr , Peter Kirton

We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the…

强关联电子 · 物理学 2017-03-15 K. J. Kapcia , S. Robaszkiewicz , M. Capone , A. Amaricci

We consider Mott insulators driven by periodic coherent laser radiation, using both single orbital and multi-orbital models, noting that the latter is of more interest in solid state systems. We derive general expressions for the resulting…

强关联电子 · 物理学 2019-05-15 Kasra Hejazi , Jianpeng Liu , Leon Balents

A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important…