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The competition between short-range and cavity-mediated infinite-range interactions in a cavity-boson system leads to the existence of a superfluid phase and a Mott-insulator phase within the self-organized regime. In this work, we…

Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency…

This article reviews the effort to understand the physics of high temperature superconductors from the point of view of doping a Mott insulator. The basic electronic structure of the cuprates is reviewed, emphasizing the physics of strong…

强关联电子 · 物理学 2009-09-29 Patrick A. Lee , Naoto Nagaosa , Xiao-Gang Wen

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

We consider periodically driven Anderson insulators. The short time behavior for weak, monochromatic, uniform electric fields is given by linear response theory and was famously derived by Mott. We go beyond this to consider both long…

无序系统与神经网络 · 物理学 2018-12-12 Dillon T. Liu , J. T. Chalker , Vedika Khemani , S. L. Sondhi

The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite…

We consider the Bose-Hubbard model on a two-leg ladder under an artificial magnetic field, and investigate the superfluid-to-Mott insulator transition in this setting. Recently, this system has been experimentally realized [M.Atala…

量子气体 · 物理学 2015-02-03 Ahmet Keleş , M. Ö. Oktel

The density driven Mott transition is studied by means of Dynamical Mean-Field Theory in the Hubbard-Holstein model, where the Hubbard term leading to the Mott transition is supplemented by an electron-phonon (e-ph) term. We show that an…

强关联电子 · 物理学 2007-08-07 M. Capone , G. Sangiovanni , C. Castellani , C. Di Castro , M. Grilli

We expose the relevance of double occupancy conservation symmetry in application of the Hubbard-I approach to strongly correlated electron systems. We propose the utility of a composite method, viz. the Hubbard-I method in conjunction with…

强关联电子 · 物理学 2013-01-10 Przemyslaw R. Grzybowski , Ravindra W. Chhajlany

We construct and apply an exchange-correlation functional for the one-dimensional Hubbard model. This functional has built into it the Luttinger-liquid and Mott-insulator correlations, present in the Hubbard model, in the same way in which…

强关联电子 · 物理学 2007-05-23 K. Capelle , N. A. Lima , M. F. Silva , L. N. Oliveira

We present a theoretical approach to describing the Mott transition of electrons on a two dimensional lattice that begins with the low energy effective theory of the Fermi liquid. The approach to the Mott transition must be characterized by…

强关联电子 · 物理学 2012-01-25 David F. Mross , T. Senthil

Motivated by the recent experiment on p-orbital band bosons in optical lattices, we study theoretically the quantum phases of Mott insulator and superfluidity in two-dimensions. The system features a novel superfluid phase with transversely…

量子气体 · 物理学 2015-03-19 Xiaopeng Li , Erhai Zhao , W. Vincent Liu

The paramagnetic phase of the one-band Hubbard model is studied at zero-temperature, within the framework of dynamical mean-field theory, and for general particle-hole asymmetry where a doping-induced Mott transition occurs. Our primary…

强关联电子 · 物理学 2016-02-01 David E. Logan , Martin R. Galpin

We establish the nonequilibrium thermal phases of a voltage driven antiferromagnetic Mott insulator in three dimensions, realised at steady state under a voltage bias. Starting from the Keldysh action for the half filled Hubbard model we…

强关联电子 · 物理学 2022-03-01 Arijit Dutta , Pinaki Majumdar

The description of interactions in strongly-correlated topological phases of matter remains a challenge. Here, we develop a stochastic functional approach for interacting topological insulators including both charge and spin channels. We…

强关联电子 · 物理学 2021-08-18 Joel Hutchinson , Philipp W. Klein , Karyn Le Hur

We study the nonequilibrium dynamics of photoexcited electrons in the narrow-gap Mott insulator VO$_2$. The initial stages of relaxation are treated using a quantum Boltzmann equation methodology, which reveals a rapid ($\sim$ femtosecond…

强关联电子 · 物理学 2016-03-23 Zhuoran He , Andrew J. Millis

Mott insulators provide stable quantum states and long coherence times to due to small number fluctuations, making them good candidates for quantum memory and atomic circuits. We propose a proof-of-principle for a 1D Mott switch using an…

量子气体 · 物理学 2018-05-15 Marie A. McLain , Lincoln D. Carr

We numerically study the superfluid to Mott insulator transition for bosonic atoms in a one dimensional lattice by exploiting a recently developed simulation method for strongly correlated systems. We demonstrate this methods accuracy and…

软凝聚态物质 · 物理学 2009-11-10 S. R. Clark , D. Jaksch

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

强关联电子 · 物理学 2015-08-20 Masanori Kohno

One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott…